Zobrazeno 1 - 10 of 115 pro vyhledávání: '"D. A. Veselov"'
1
Institutional changes, inequality and long-run economic development: Theory and empirics
Autor: D. A. Veselov, A. M. Yarkin
Publikováno v: Voprosy Ekonomiki. :47-71
This paper reviews theoretical and empirical literature on long-run economic development, institutional dynamics, and their interplay. Special attention is given to papers that explore the reasons why pro-growth reforms and institutional changes may
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f27fa3ac6bebf7ef1fad644803d4e8c
https://doi.org/10.32609/0042-8736-2022-1-47-71
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2
Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
Autor: Yu. K. Bobretsova, V. V. Andryushkin, Nikita A. Pikhtin, V. V. Shamakhov, A. A. Klimov, D. A. Veselov, K.V. Bakhvalov, Sergey O. Slipchenko
Publikováno v: Quantum Electronics. 51:987-991
Free carrier absorption of optical radiation in layers of an AlGaAs/GaAs heterostructure is studied by the method of probe radiation coupling in order to determine the absorption cross section parameter in the AlGaAs material with a high (22%) alumin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35166be13817ad476021340371dd1d2b
https://doi.org/10.1070/qel17640
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4
Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides
Autor: A. Yu. Andreev, V. N. Svetogorov, A. A. Marmalyuk, Yu. L. Ryaboshtan, Sergey O. Slipchenko, Nikita A. Pikhtin, Maxim A. Ladugin, D. A. Veselov, A A Padalitsa, N. A. Volkov, I. V. Yarotskaya, A. V. Lyutetskii
Publikováno v: Quantum Electronics. 51:283-286
Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and asymmetric waveguides are comparatively studied. It is shown that the use of these waveguides with a simultaneous increase in the quantum well depth makes it possible t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::29f96e35c09ad3bd4d9cf3972a4e7f4b
https://doi.org/10.1070/qel17540
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5
High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm
Autor: Maxim A. Ladugin, V. A. Strelets, Nikita A. Pikhtin, D. A. Veselov, N. A. Volkov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A A Padalitsa, V. N. Svetogorov, K. V. Bakhvalov, A. V. Lyutetskii, Sergey O. Slipchenko
Publikováno v: Quantum Electronics. 51:909-911
High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9 – 2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f641b30f79c88f28bef87b7f192a1b4
https://doi.org/10.1070/qel17635
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6
Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
Autor: A A Padalitsa, A. Yu. Andreev, A. A. Marmalyuk, D. A. Veselov, I. V. Yarotskaya, N. A. Volkov, Nikita A. Pikhtin, Maxim A. Ladugin, Sergey O. Slipchenko, A. V. Lyutetskii, V. N. Svetogorov, Yu. L. Ryaboshtan
Publikováno v: Quantum Electronics. 51:133-136
Semiconductor lasers based on AlGaInAs/InP heterostructures with a strongly asymmetric waveguide are studied. It is shown that the use of such a waveguide simultaneously with an increased quantum well energy depth provides conditions for increasing t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::962db92d49f9ce5c53b48f9d7cffa033
https://doi.org/10.1070/qel17480
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7
Light – current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures
Autor: P. S. Gavrina, D. A. Veselov, P. S. Kop’ev, V. V. Shamakhov, Nikita A. Pikhtin, E. V. Fomin, A. A. Podoskin, Sergey O. Slipchenko
Publikováno v: Quantum Electronics. 51:129-132
Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39884679e45c2f71ec3e2bee152f9b1b
https://doi.org/10.1070/qel17478
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8
Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures
Autor: Sergey O. Slipchenko, D. A. Veselov, A. A. Podoskin, A. A. Marmalyuk, Maxim A. Ladugin, N. V. Voronkova, Yu. K. Bobretsova, Nikita A. Pikhtin, T. A. Bagaev
Publikováno v: Quantum Electronics. 51:124-128
We report a technique for studying the absorption of optical radiation in layers of a semiconductor heterostructure by the method of probe radiation coupling. The studies are carried out using specially made isotype samples based on AlGaAs/GaAs, simu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20983ac30c3de6dc2d91d098aec6de9e
https://doi.org/10.1070/qel17427
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9
Lasing dynamics of diode-pumped Yb – Er laser with a passive Q switch exposed to high-power external light
Autor: A. M. Kot, P. V. Shpak, E. O. Batura, Nikita A. Pikhtin, M. V. Bogdanovich, Yu. K. Bobretsova, V. N. Dudikov, Sergey O. Slipchenko, D. A. Veselov, A. G. Ryabtsev, A. V. Grigor’ev, Gennadii I. Ryabtsev
Publikováno v: Quantum Electronics. 50:822-825
The temporal dynamics of diode-side-pumped Yb – Er laser, with a passive Co2+ : MgAl2O4 Q switch illuminated by a light beam (total fluence of 0.15 – 0.16 J cm−2) from a semiconductor pulsed module, is investigated. It is shown that, using this
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c3e9e245baa4ba02224f3094902bee8
https://doi.org/10.1070/qel17274
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10
Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers
Autor: D. A. Veselov, Nikita A. Pikhtin, I. S. Shashkin, A. A. Klimov, Sergey O. Slipchenko, Yu. K. Bobretsova, V. A. Kryuchkov
Publikováno v: Quantum Electronics. 50:722-726
Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 − 1.1 μm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7342d40c561f860d3a48ec36ec1e151e
https://doi.org/10.1070/qel17323
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