Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D. A. Stroganov"'
Autor:
D. A. Stroganov
Publikováno v:
Вестник Мининского университета, Vol 0, Iss 1-2 (2017)
The article attempts to show some shifts at the historiographical fields and emerging of the new directions within the modern historical investigations, namely, a "new cultural history» that became a historical anthropology later. Drawing upon the l
Externí odkaz:
https://doaj.org/article/9149efb192b649e9af9530197cb51e2a
Publikováno v:
Measurement Techniques. 61:955-958
The technology of microelectronic resistive gas sensors is considered. Heater and thermistor contacts are formed on an oxidized silicon substrate by sputtering a nichrome film and subsequent photolithography in combination with reactive magnetron spu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2edd931d497348b687c8a958ba2d1c08
https://doi.org/10.1007/s11018-018-1532-0
https://doi.org/10.1007/s11018-018-1532-0
Autor:
S. M. Kalugin, O. B. Sarach, A. A. Tevjashov, D. A. Stroganov, A. M. Guljaev, Russian Space Systems, V. A. Kotov
Publikováno v:
Izmeritel`naya Tekhnika. :70-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc53d31b5212c2289fdd8b9b496efad
https://doi.org/10.32446/0368-1025it.2018-9-70-72
https://doi.org/10.32446/0368-1025it.2018-9-70-72
Autor:
A. P. Kovarsky, D. N. Stroganov, Samuel Clagett Strite, Tilman A. Beierlein, M. A. Yagovkina, Yu. L. Kretser, Yu.A. Kudriavtsev
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 3
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ead549ef8a9d5c981df181eb5719d4
https://doi.org/10.1557/s109257830000082x
https://doi.org/10.1557/s109257830000082x