Zobrazeno 1 - 10
of 26
pro vyhledávání: '"D. A. Pryakhin"'
Autor:
V. V. Rogov, Vladimir I. Shashkin, Alexander Yu. Klimov, Evgeny A. Vopilkin, D. A. Pryakhin, Irina Yu Shuleshova, Sergey A. Gusev, Evgeny V. Skorohodov
Publikováno v:
IEEE Sensors Journal. 14:1831-1835
A possibility of fabrication of a microelectromechanical tunneling sensor without a feedback loop is demonstrated. The tunneling gap of less than 10 nm shows a long-term stability at room conditions. The sensor can be used for construction of an acce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506569908e27a81bf3058059bead531b
https://doi.org/10.1109/jsen.2014.2305307
https://doi.org/10.1109/jsen.2014.2305307
Autor:
E.D. Chhalo, D. V. Kozlov, R.Kh. Zhukavin, Pavel A. Yunin, Yu. N. Drozdov, A. V. Novikov, N. A. Bekin, V.N. Shastin, M. N. Drozdov, D. A. Pryakhin, D. N. Lobanov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 57:42-46
A study of vertical transport in δ -doped SiGe/Si heterostructures is presented. An asymmetrical triple barrier structure was grown with a δ -layer of boron impurity in the center of a narrow quantum well. The growth procedure was followed by conve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610b5b8fb7bfa725ba7b10d67a9c1acd
https://doi.org/10.1016/j.physe.2013.10.022
https://doi.org/10.1016/j.physe.2013.10.022
Autor:
D. A. Pryakhin, Petr G. Sennikov, Leonid Mochalov, Yu. N. Drozdov, Pavel Bulkin, L. V. Gavrilenko, P. Roca i Cabarrocas, Pavel A. Yunin, Boris A. Andreev
Publikováno v:
Thin Solid Films. 552:46-49
Our objective is to study Raman spectra from 74Ge isotope enriched nc-Ge/amorphous-Ge structures, given the expected minimal influence of the matrix on the nanocrystalline phase in the structures with a modified isotope composition. We also assess th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e428123d4be0b04c6e46964ad942aa23
https://doi.org/10.1016/j.tsf.2013.12.014
https://doi.org/10.1016/j.tsf.2013.12.014
Autor:
A. U. Lukyanov, A. D. Tertyshnik, P. V. Volkov, A. V. Goryunov, D. A. Pryakhin, V. I. Shashkin
Publikováno v:
Russian Microelectronics. 40:309-315
Using weakly coherent tandem interferometry, the possibility of simultaneous temperature and film thickness measurements in plasmochemical etching processes of silicon on insulator structure is demonstrated. It is shown that changes of the structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ac673e243dca2a62b61d4615fefb1ab
https://doi.org/10.1134/s1063739711050106
https://doi.org/10.1134/s1063739711050106
Autor:
Yu. N. Drozdov, Boris A. Andreev, M. N. Drozdov, D. A. Pryakhin, Hans-Joachim Pohl, Petr G. Sennikov, A. S. Kuznetsov, Nickolay Abrosimov, A. V. Murel, Helge Riemann, V. I. Shashkin
Publikováno v:
Crystal Research and Technology. 45:899-908
The process of plasma chemical deposition of silicon from inductively coupled plasma of the mixture of high-purity SiF4 and H2 sustained by RF discharge at 13.56 MHz in amount sufficient for subsequent growth of crystal by Czochralski method was inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f042c3ae024eb3f8ddf4678ae1cf89fd
https://doi.org/10.1002/crat.201000090
https://doi.org/10.1002/crat.201000090
Autor:
M. N. Drozdov, L. V. Gavrilenko, Yu. N. Drozdov, D. A. Pryakhin, Boris A. Andreev, Petr G. Sennikov, Hans-Joachim Pohl, V. I. Shashkin
Publikováno v:
Crystal Research and Technology. 45:983-987
The process of plasma chemical deposition of silicon was investigated from its tetrafluoride containing 99.99% of 28Si isotope in the form of thin layer of nano-crystalline silicon on silicon substrate and of thick layer of polycrystalline silicon on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25deca5151beda992762a95b55d2b79f
https://doi.org/10.1002/crat.201000088
https://doi.org/10.1002/crat.201000088
Autor:
Sergey Golubev, Vladimir Shashkin, M. N. Drozdov, Hans-Joachim Pohl, D. A. Pryakhin, Petr G. Sennikov, Boris A. Andreev
Publikováno v:
ECS Transactions. 25:229-233
The results on production of films and bulk silicon samples of different isotopic composition by PECVD method are reported. The samples are investigated by the methods of X-ray diffraction, Raman scattering, secondary-ion mass spectrometry, IR spectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c12bfc4d3ec602d724284d0a44d5ff1
https://doi.org/10.1149/1.3207595
https://doi.org/10.1149/1.3207595
Autor:
D. A. Pryakhin, Sergey Golubev, A. S. Kuznetsov, V. I. Shashkin, Boris A. Andreev, M. N. Drozdov, Hans-Joachim Pohl, Yu. N. Drozdov, Petr G. Sennikov
Publikováno v:
Semiconductors. 43:968-972
The data on fabrication of silicon layers on various substrates by plasma enhanced chemical vapor deposition from the (silicon tetrafluoride)-hydrogen system are reported. The emission spectra of the plasma in the system are recorded. The samples wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1a2f9e079ce12639ffc90e1c92501f0
https://doi.org/10.1134/s1063782609070288
https://doi.org/10.1134/s1063782609070288
Autor:
N. V. Vostokov, O. I. Khrykin, M. N. Drozdov, D. A. Pryakhin, A. V. Murel, Yu. N. Drozdov, V. I. Shashkin, V. M. Danil’tsev
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2:514-517
The effect of B dopants on the properties of InAs quantum dots is studied experimentally. It is shown that the incorporation of B atoms decreases the integral amount of InAs that is needed to form islands according to the Stransky-Krastanov mechanism
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa89fe1d94aba93bbb62dcaff957dcc
https://doi.org/10.1134/s1027451008040022
https://doi.org/10.1134/s1027451008040022
Autor:
O. I. Khrykin, A. V. Goryunov, D. A. Pryakhin, A. Yu. Luk’yanov, A. D. Tertyshnik, V. M. Danil’tsev, P. V. Volkov, V. I. Shashkin
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2:587-591
The possibility of applying low-coherent tandem interferometry to optical monitoring of the temperature of a semiconductor substrate and the thickness of a deposited layer in metal-organic vapor-phase epitaxy (MOVPE) is demonstrated for the first tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b51afafa6f564fd19d82ec807a6f197
https://doi.org/10.1134/s1027451008040174
https://doi.org/10.1134/s1027451008040174