Zobrazeno 1 - 10
of 12
pro vyhledávání: '"D. A. Malevskiy"'
Autor:
Mikhail A. Mintairov, Nikolay A. Kalyuzhnyy, V. M. Emelyanov, R. A. Salii, D. A. Malevskiy, M. V. Nakhimovich, M. Z. Shvarts, Pavel V. Pokrovskiy, Sergey A. Mintairov
Publikováno v:
IEEE Electron Device Letters. 41:1324-1327
An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C
Autor:
A. N. Panchak, N. Yu. Davidyuk, A. V. Andreeva, D. A. Malevskiy, Alexander V. Chekalin, N. A. Sadchikov
Publikováno v:
Semiconductors. 52:371-375
The results of studying the effect of various conditions of heat dissipation on heating and temperature distribution in components of concentrator photovoltaic modules are reported. The modules based on Fresnel lenses and triple-junction solar cells
Publikováno v:
Technical Physics Letters. 45:24-26
AlGaAs/GaAs-based semiconductor photovoltaic converters (PVCs) of laser radiation, capable of operating at an illuminance up to 9 kW/cm2 with retained isothermal state have been studied. This state was confirmed by the logarithmic shape of dependence
Autor:
Pavel V. Pokrovskiy, S. A. Mintairov, D. A. Malevskiy, V. M. Emelyanov, M. A. Mintairov, R. A. Salii, M. V. Nakhimovich, M. Z. Shvarts, N. A. Kalyuzhnyy
Publikováno v:
Journal of Physics: Conference Series. 1697:012191
The results of studying the InxGa1−xAs laser power converters with the indium percentage of 18% and of 23% are presented. In the mode of 1064 nm laser radiation conversion the photovoltaic parameters dynamics with raising temperature is discussed.
Publikováno v:
Semiconductors. 50:1356-1361
This study is aimed at investigating the main photoelectric characteristics of three-cascade InGaP/InGaAs/Ge photoelectric converters in a broad temperature range (–197°C ≤ T ≤ +85°C). On account of analysis of photosensitivity spectra and op
Autor:
V.D. Rumyantsev, N. A. Sadchikov, D. A. Malevskiy, Antonio Luque, Alexander V. Chekalin, A. N. Panchak, Viacheslav M. Andreev, Nikolay Yu. Davidyuk
Publikováno v:
IEEE Journal of Photovoltaics, ISSN 2156-3381, 2015-10, Vol. 5, No. 6
Archivo Digital UPM
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Archivo Digital UPM
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A procedure for measuring the overheating temperature $(\Delta T)$ of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b32d6b717837f1303c26dbf943443edc
https://oa.upm.es/41075/
https://oa.upm.es/41075/
Publikováno v:
AIP Conference Proceedings.
Knowing the temperature behavior of the photovoltaic parameters in multi-junction (MJ) solar cells (SCs) can give information suitable for comparing different cell structures and for estimating a potential of their operation in various environmental
Autor:
N. Yu. Davidyuk, V.D. Rumyantsev, N. A. Sadchikov, D. A. Malevskiy, A. N. Panchak, Alexander V. Chekalin, P. V. Pokrovskiy
Publikováno v:
AIP Conference Proceedings.
A new method has been developed for accurate measurements of the solar cell temperature in maximum power point (MPP) operation regime in comparison with that in open circuit (OC) regime (TMPP and TOC). For this, an electronic circuit has been elabora
Autor:
V. R. Larionov, M. Z. Shvarts, A. V. Chekalin, P. V. Pokrovskiy, V. D. Rumyantsev, D. A. Malevskiy
Publikováno v:
ResearcherID
At fabrication of the concentrator SCs one of the central problems is radical reduction of the internal ohmic losses. To distinguish the presence of the internal resistance components in an I-V curve, uncertainty due to the shape of the p-n junction(
Autor:
V. D. Rumyantsev, V. R. Larionov, D. A. Malevskiy, P. V. Pokrovskiy, N. A. Sadchikov, Frank Dimroth, Sarah Kurtz, Gabriel Sala, Andreas W. Bett
Publikováno v:
AIP Conference Proceedings.
We report the results on design, manufacturing and test measurements of the solar simulator for high concentration PV systems with aperture area as large as 0.5×1.0 m2. For correct HCPV module characterization, the light source must have an angular