Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D. A. Laleyan"'
Autor:
S. Zhao, S. Y. Woo, S. M. Sadaf, Y. Wu, A. Pofelski, D. A. Laleyan, R. T. Rashid, Y. Wang, G. A. Botton, Z. Mi
Publikováno v:
APL Materials, Vol 4, Iss 8, Pp 086115-086115-7 (2016)
Self-organized AlGaN nanowires by molecular beam epitaxy have attracted significant attention for deep ultraviolet optoelectronics. However, due to the strong compositional modulations under conventional nitrogen rich growth conditions, emission wave
Externí odkaz:
https://doaj.org/article/c66d0357a6394193a6cabebd77268f70
Autor:
A. Pandey, X. Liu, Z. Deng, W. J. Shin, D. A. Laleyan, K. Mashooq, E. T. Reid, E. Kioupakis, P. Bhattacharya, Z. Mi
Publikováno v:
Physical Review Materials. 3
An epitaxial growth process, referred to as metal-semiconductor junction assisted epitaxy, of ultrawide bandgap aluminum gallium nitride (AlGaN) is disclosed. The epitaxy of AlGaN is performed in metal-rich (e.g., Ga-rich) conditions using plasma-ass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252be63065fec9888bc5030393e358ef
https://doi.org/10.1103/physrevmaterials.3.053401
https://doi.org/10.1103/physrevmaterials.3.053401