Zobrazeno 1 - 10
of 24
pro vyhledávání: '"D. A. Kobtsev"'
Publikováno v:
Russian physics journal. 2021. Vol. 63, № 11. P. 1997-2003
A configuration and test samples of photoconductive dipole antennas based on SI-GaAs:Cr and LT-GaAs for generation and detection of terahertz radiation are developed. Their operating characteristics in the pulsed mode and in the mode of operation as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc386d7ef7f45f115bbf3702efe32ab1
https://doi.org/10.1007/s11182-021-02262-0
https://doi.org/10.1007/s11182-021-02262-0
Autor:
S. A. Bereznaya, D. A. Kobtsev, S. Yu. Sarkisov, R. A. Redkin, Z. V. Korotchenko, V. A. Novikov
Publikováno v:
Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fddbdfc3c45a29445f9d52abe77e8675
https://doi.org/10.1007/s11182-021-02198-5
https://doi.org/10.1007/s11182-021-02198-5
Publikováno v:
Russian Physics Journal. 63:547-553
In the present work, the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in SI-GaAs:Cr and EL2-GaAs semiconductor crystals has been studied using pump-probe terahertz spectroscopy. The obtained experimental data w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd32e550f9abfbe886ddd3d4d0c980dc
https://doi.org/10.1007/s11182-020-02068-6
https://doi.org/10.1007/s11182-020-02068-6
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii. Fizika. :148-153
A configuration and test samples of photoconductive dipole antennas based on SI-GaAs: Cr and LT-GaAs for terahertz radiation generation and detection were developed. Their operating characteristics in pulsed mode and in the mode of operation as photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72989cd338b124694f5a33a840a66ba2
https://doi.org/10.17223/00213411/63/11/148
https://doi.org/10.17223/00213411/63/11/148
Autor:
R. A. Redkin, Sergey Yu. Sarkisov, V. A. Novikov, Yury S. Sarkisov, Timofei Mihaylov, S. A. Bereznaya, I. Kolesnikova, D. A. Kobtsev, Vladimir Voevodin
Publikováno v:
International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si substrates providing the highest optical contrast for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eecac54dfb97414b17d3bd712a3ca0f4
https://doi.org/10.1142/s0217979221502738
https://doi.org/10.1142/s0217979221502738
Autor:
Kovalenko, D. V.1,2 (AUTHOR), Yudin, V. I.1,2,3 (AUTHOR) viyudin@mail.ru, Basalaev, M. Yu.1,2,3 (AUTHOR), Strokova, N. V.1 (AUTHOR), Taichenachev, A. V.1,2 (AUTHOR), Prudnikov, O. N.1,2 (AUTHOR)
Publikováno v:
Journal of Experimental & Theoretical Physics. Aug2023, Vol. 137 Issue 2, p223-228. 6p.
Publikováno v:
Scopus-Elsevier
Parameters of nonequilibrium charge carriers in a semiconductor are important for the operation of devices for terahertz generation and detection. Generally it is believed that for photoconductive dipole antenna (PDA) a short charge carrier lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68f3d3888820284b7b2bd7434fb86f51
http://www.scopus.com/inward/record.url?eid=2-s2.0-85084525759&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85084525759&partnerID=MN8TOARS
Autor:
O. P. Tolbanov, A. V. Tyazhev, I. Kolesnikova, Sergey Yu. Sarkisov, R. A. Redkin, D. A. Kobtsev
Publikováno v:
Scopus-Elsevier
SI-GaAs:Cr is a material for ionizing radiation detectors [1], in which, on the contrary to materials for THz devices [2], a long charge carrier lifetime, at the level of tens and hundreds of nanoseconds, is required. Despite the fact that SI-GaAs:Cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::452768e2993af26570bd8c4179cd4229
http://www.scopus.com/inward/record.url?eid=2-s2.0-85084565085&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85084565085&partnerID=MN8TOARS
Autor:
Voevodin, V. I.1 (AUTHOR) voevodinvova2013@yandex.ru, Yudin, N. N.1,2 (AUTHOR), Sarkisov, S. Yu.1 (AUTHOR)
Publikováno v:
Russian Physics Journal. Dec2021, Vol. 64 Issue 8, p1513-1516. 4p.
Autor:
Kobtsev, D. A.1 (AUTHOR) Danbers27@gmail.com, Tyazhev, A. V.1 (AUTHOR), Kolesnikova, I. I.1 (AUTHOR), Redkin, R. A.1 (AUTHOR)
Publikováno v:
Russian Physics Journal. Mar2021, Vol. 63 Issue 11, p1997-2003. 7p.