Výsledky vyhledávání - "D. A. J. Moran"

Two methods of realising 10 nm T-gate lithography

Autor: D. A. J. Moran, Steven Bentley, I.G. Thayne, Xu Li

Publikováno v: Microelectronic Engineering. 86:1067-1070

This paper presents two separate methods for the fabrication of 10nm footprint T-gates using a two-step gate process. We examine the limits of lithographic and pattern transfer processes using the exposure of ZEP520A resist by electron beam lithograp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54ce602be87b131634482d6178aa80ea
https://doi.org/10.1016/j.mee.2008.12.029

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Fabrication of 22nm T-gates for HEMT applications

Autor: Xu Li, Steven Bentley, I.G. Thayne, D. A. J. Moran

Publikováno v: Microelectronic Engineering. 85:1375-1378

This paper reports a new method for the fabrication of sub-25nm T-gates for high electron mobility transistors (HEMTs). For robust fabrication, it may be advantageous to employ a two-step process where the gate foot and head can be separately defined

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::383bc894617f94d88c0931b4ab74fbfc
https://doi.org/10.1016/j.mee.2008.01.058

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High electron mobility transistors fabricated by nanoimprint lithography

Autor: Stephen Thoms, Y. Chen, Douglas Macintyre, E. Boyd, D. A. J. Moran, Iain G. Thayne

Publikováno v: Microelectronic Engineering. :189-195

High frequency low noise III-V transistors commonly have T-shaped gates since they provide a combination of short gate length and low gate resistance. This paper describes the fabrication of working pHEMT transistors with 120-nm T-shaped gates using

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3d8f2066468738bce58615ff03c7219
https://doi.org/10.1016/s0167-9317(03)00183-7

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Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics

Autor: K. Rajagopalan, Asen Asenov, Haiping Zhou, Matthias Passlack, Xu Li, Stephen Thoms, I.G. Thayne, Peter Fejes, Ravindranath Droopad, D. A. J. Moran, Hill Richard J, Douglas Macintyre

Publikováno v: 2008 IEEE Silicon Nanoelectronics Workshop.

There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3edb4e7e60fa431c05ec35b65bcd2f59
https://doi.org/10.1109/snw.2008.5418447

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50nm GaAs mHEMTs and MMICs for Ultra-Low Power Distributed Sensor Network Applications

Autor: Martin Christopher Holland, Stephen Thoms, Khaled Elgaid, Helen McLelland, Iain G. Thayne, D. A. J. Moran, C.R. Stanley

Publikováno v: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 muW/mu demonstrating fT of 30-400 GHz. These metrics enable the realisation of ultra-low power (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63a33c996bd4174a65a512ad0a5e0603
https://doi.org/10.1109/iciprm.2006.1634143

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Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f/sub T/ of 440GHz for millimeterwave imaging receivers applications

Autor: Martin Christopher Holland, Khaled Elgaid, I.G. Thayne, D. A. J. Moran, Helen McLelland

Publikováno v: International Conference on Indium Phosphide and Related Materials, 2005..

The 50 nm m-HEMT exhibits extremely high f/sub T/, of 440GHz, low F/sub min/ of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af4be5fcc02311ee94ca8b5d526888e5
https://doi.org/10.1109/iciprm.2005.1517439

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Fats in Spreadable Products

Autor: D. P. J. Moran

Publikováno v: Fats in Food Products ISBN: 9781461358848

The fat spreads market shows considerable regional variations on a global basis. In Northern Europe, America and Australasia in particular, the market is strongly brands oriented; there has, however, been a changing emphasis from butter and packet ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3cb31a7dec5bc2b4e9e45acbf6c5fd67
https://doi.org/10.1007/978-1-4615-2121-1_5

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