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pro vyhledávání: '"D. A. Huseynova"'
Publikováno v:
Semiconductors. 52:840-842
The photothreshold of an α-GeS layered crystal is calculated from first principles based on the functional density method depending on its thickness. Two neighboring crystal plates consisting of several layers are separated by vacuum 4 layers thick,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b17387230a6ac3d865a97fde97fe62f
https://doi.org/10.1134/s1063782618070060
https://doi.org/10.1134/s1063782618070060
