Výsledky vyhledávání - "D. A. Goloschapov"

Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations

Autor: Pavel Seredin, D. A. Goloschapov, A. S. Lenshin, V. E. Ternovaya, I. S. Tarasov, I. N. Arsentyev, A. D. Bondarev

Publikováno v: Bulletin of the Russian Academy of Sciences: Physics. 81:1119-1126

IR and UV spectroscopy is used to study the properties of nanostructured aluminum nitride films obtained via reactive ion-plasma sputtering on GaAs substrates with different orientations. Nanostructured thin (100–200 nm) films of cubic aluminum nit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2716b4266297602549d047f697fd92dd
https://doi.org/10.3103/s1062873817090210

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Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates

Autor: Pavel Seredin, L. S. Vavilova, I. N. Arsent’ev, A. S. Lenshin, I. S. Tarasov, D. L. Goloschapov, A. D. Bondarev, A. N. Lukin

Publikováno v: Semiconductors. 48:1527-1531

Structural analysis and optical spectroscopy are used to study the properties of ultrathin Al2O3 films deposited in an ion-plasma sputtering installation. It is possible to demonstrate that the technological method used to deposit the films can yield

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5ddf1ca47284f78040cea015fd8c174f
https://doi.org/10.1134/s1063782614110256

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