Zobrazeno 1 - 7
of 7
pro vyhledávání: '"D. A. Choutov"'
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:834-839
Fabricating device structures from the III-N wide bandgap semiconductors requires anisotropoic dry etching processes that leave smooth surfaces with stoichiometric composition after transferring high-resolution patterns with vertical sidewalls. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a036c3e1cd5d6d4cd3a8c4270f8c18
https://doi.org/10.1557/s1092578300003495
https://doi.org/10.1557/s1092578300003495
Autor:
Kevin P. Martin, D. A. Choutov, H. P. Gillis, Jon T. Moore, Kenneth Douglas, Thomas A. Winningham
Publikováno v:
Surface Science. 406:221-228
A precisely ordered and precisely located array of 5 nm diameter nanoclusters has been fabricated by first etching into the substrate an array of holes with diameters comparable with the size of nanoclusters sought and then depositing adatoms on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9948a385b0ca5d374ba363940b526fe9
https://doi.org/10.1016/s0039-6028(98)00115-0
https://doi.org/10.1016/s0039-6028(98)00115-0
Publikováno v:
Journal of Electronic Materials. 26:301-305
Hetero-epitaxial films of GaN(OOOl), deposited on SiC(OOOl) by organometallic vapor phase epitaxy and masked by 200 nm of SiO2, have been patterned by low energy electron enhanced etching (LE4) in hydrogen and chlorine dc plasmas at room temperature.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190bc7b2fb5c1138d8ef1604bfdcac6f
https://doi.org/10.1007/s11664-997-0168-7
https://doi.org/10.1007/s11664-997-0168-7
Publikováno v:
JOM. 48:50-55
Fabricating device structures from the III-N semiconductors requires dry-etching processes that leave smooth surfaces with stoichiometric composition after transferring patterns with vertical sidewalls. Results obtained by standard methods are summar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c2df04521b27f1a1fc8bf48f4cc0d9
https://doi.org/10.1007/bf03223028
https://doi.org/10.1007/bf03223028
Publikováno v:
Journal of The Electrochemical Society. 143:L251-L253
The authors have demonstrated low energy electron-enhanced etching (LE4) of 1.0 {micro}m thick films of GaN on (100) Si substrates with good anisotropy. The etch rate increased from 70 to 525 {angstrom}/min as the sample temperature increased from 50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9c0c816febfb8951095ac60a35ddb5
https://doi.org/10.1149/1.1837223
https://doi.org/10.1149/1.1837223
Publikováno v:
Applied Physics Letters. 68:2255-2257
Low energy electron‐enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low‐pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy (≳20), good selectivity (≳200 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e35998461dfad422a46001883ddcb8
https://doi.org/10.1063/1.115876
https://doi.org/10.1063/1.115876
Autor:
U B, Sleytr, H, Bayley, M, Sára, A, Breitwieser, S, Küpcü, C, Mader, S, Weigert, F M, Unger, P, Messner, B, Jahn-Schmid, B, Schuster, D, Pum, K, Douglas, N A, Clark, J T, Moore, T A, Winningham, S, Levy, I, Frithsen, J, Pankovc, P, Beale, H P, Gillis, D A, Choutov, K P, Martin
Publikováno v:
FEMS microbiology reviews. 20(1-2)
The wealth of information existing on the general principle of S-layers has revealed a broad application potential. The most relevant features exploited in applied S-layer research are: (i) pores passing through S-layers show identical size and morph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8189d5924cca11abc5f9617aa8bd67e0
https://pubmed.ncbi.nlm.nih.gov/9276930
https://pubmed.ncbi.nlm.nih.gov/9276930