Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D. A. Bisaillion"'
Autor:
Barry MacDougall, D. A. Bisaillion, K. B. Clark, G. I. Sproule, M. J. Graham, D. F. Mitchell, Jennifer A. Bardwell
Publikováno v:
Scopus-Elsevier
The anodic behavior of Si in dilute NH 3 solutions has been investigated with the aim of producing thin gate oxides of thickness between 4 and 15 nm. The oxide is formed under potentiostatic conditions and in varying solution concentrations. The thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f51626e917806698ddf59f5c24ead685
https://doi.org/10.1149/1.2220785
https://doi.org/10.1149/1.2220785
Autor:
G. I. Sproule, Jennifer A. Bardwell, Barry MacDougall, K. B. Clark, D. F. Mitchell, D. A. Bisaillion, M. J. Graham
Publikováno v:
ChemInform. 24
The anodic behavior of Si in dilute NH 3 solutions has been investigated with the aim of producing thin gate oxides of thickness between 4 and 15 nm. The oxide is formed under potentiostatic conditions and in varying solution concentrations. The thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e2ec2438ae98a4e62352cd2b4d6f54
https://doi.org/10.1002/chin.199349016
https://doi.org/10.1002/chin.199349016