Zobrazeno 1 - 8
of 8
pro vyhledávání: '"D. A. Bisaillion"'
Autor:
Barry MacDougall, D. A. Bisaillion, K. B. Clark, G. I. Sproule, M. J. Graham, D. F. Mitchell, Jennifer A. Bardwell
Publikováno v:
Scopus-Elsevier
The anodic behavior of Si in dilute NH 3 solutions has been investigated with the aim of producing thin gate oxides of thickness between 4 and 15 nm. The oxide is formed under potentiostatic conditions and in varying solution concentrations. The thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f51626e917806698ddf59f5c24ead685
https://doi.org/10.1149/1.2220785
https://doi.org/10.1149/1.2220785
Autor:
G. I. Sproule, Jennifer A. Bardwell, Barry MacDougall, K. B. Clark, D. F. Mitchell, D. A. Bisaillion, M. J. Graham
Publikováno v:
ChemInform. 24
The anodic behavior of Si in dilute NH 3 solutions has been investigated with the aim of producing thin gate oxides of thickness between 4 and 15 nm. The oxide is formed under potentiostatic conditions and in varying solution concentrations. The thic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e2ec2438ae98a4e62352cd2b4d6f54
https://doi.org/10.1002/chin.199349016
https://doi.org/10.1002/chin.199349016
Publikováno v:
Journal of Applied Physics; 6/1/1996, Vol. 79 Issue 11, p8761, 9p, 2 Charts, 9 Graphs
Autor:
Lehmann, Volker
Publikováno v:
Electrochemistry of Silicon: Instrumentation, Science, Materials & Applications; 2002, p251-271, 21p
Autor:
Allegretto, E. M., Bardwell, J. A.
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1996, Vol. 14 Issue 4, p2437-2442, 6p
Publikováno v:
Applied Physics Letters; 1/24/1994, Vol. 64 Issue 4, p446, 2p, 2 Graphs
Autor:
Yves J. Chabal
The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en titled'Dynamics of sili
Autor:
Xiaoge Gregory Zhang
It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been