Zobrazeno 1 - 10
of 33
pro vyhledávání: '"D. A. Bedarev"'
Publikováno v:
Semiconductors. 48:1103-1108
The special postgrowth processing of structures for quantum-cascade lasers is studied. The processing includes regrowth with a high-resistivity material (indium phosphide) with a carrier concentration of n ≈ 5 × 1010 cm−3, photolithography with
Autor:
A. I. Lugovskoi, V. M. Kapustin, V. G. Solovkin, D. V. Bedarev, V. P. Ermakov, E. I. Gazizova
Publikováno v:
Chemistry and Technology of Fuels and Oils. 45:12-16
Autor:
N. V. Kryzhanovskaya, A. E. Zhukov, A. G. Gladyshev, Nikolai A. Maleev, Alexander N. Smirnov, M. M. Kulagina, V. M. Ustinov, M. V. Maksimov, D. A. Bedarev, E. V. Nikitina, A. V. Sakharov, Sergey A. Blokhin, Elizaveta Semenova, Nikolai N. Ledentsov
Publikováno v:
Semiconductors. 39:748-753
Raman scattering spectroscopy is used to study the process of selective oxidation of Al0.97Ga0.03As layers. Stresses arising in GaAs/(AlGa)xOy layers as a result of selective oxidation under different conditions are determined. The effects of local h
Autor:
M. M. Kulagina, A. G. Kuzmenkov, Nikolai N. Ledentsov, D. A. Bedarev, A. P. Vasil’ev, A. E. Zhukov, V. M. Ustinov, S. S. Mikhrin, Yu. M. Shernyakov, Yu. M. Solov’ev, A.P. Kovsh, A. S. Shulenkov, Nikolai A. Maleev, Yu. M. Zadiranov, V. A. Bykovskii, C. Moller
Publikováno v:
Semiconductors. 37:1234-1238
Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active re
Autor:
W. V. Lundin, N. N. Ledentsov, A. I. Besulkin, Alexander Usikov, Dieter Bimberg, D. A. Bedarev, E. E. Zavarin, A. V. Sakharov, A. F. Tsatsul’nikov
Publikováno v:
physica status solidi (a). 188:91-94
The optical properties of InGaN/GaN/AlGaN structures emitting in the blue-green spectral range were studied by conventional photoluminescence and optical pumping studies in stripe geometry. Multi-mode laser-like emission with clearly resolved thresho
Autor:
A. F. Tsatsul'nikov, A. V. Sakharov, Ru Chin Tu, Sun Bin Yin, D. A. Bedarev, Alexander Usikov, W. V. Lundin, Jim Y. Chi
Publikováno v:
physica status solidi (a). 188:73-77
A set of InGaN/GaN/AlGaN structures with various structure design and InGaN/GaN active region growth technique was grown by MOCVD on sapphire substrates. 300 K lasing under optical pumping with threshold excitation densities of 13.5 and 40 kW/cm 2 an
Publikováno v:
physica status solidi (b). 224:839-843
Self-assembled InAs quantum dots (QDs) are fabricated in In 0.03 Ga 0.97 As 0.99 N 0.01 and In 0.06 Ga 0.94 As 0.98 N 0.02 matrices on GaAs by solid source molecular beam epitaxy. The influence of InAs average layer thickness and matrix material on p
Autor:
Dieter Bimberg, B. V. Volovik, I. P. Soshnikov, Nikolay A. Maleev, D. A. Bedarev, I. S. Tarasov, P. S. Kop’ev, Zh. I. Alferov, A. E. Zhukov, A. F. Tsatsul’nikov, S. S. Mikhrin, A. R. Kovsh, N. N. Ledentsov, Yu. M. Shernyakov, V. M. Ustinov, D.A. Livshits, Mikhail V. Maximov
Publikováno v:
Semiconductor Science and Technology. 15:1061-1064
A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer (SML) InAs/GaAs quantum dots, emitting at about 940 nm. Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK
Autor:
Mikhail V. Maximov, B. V. Volovik, P. S. Kop’ev, A. F. Tsatsul’nikov, Dieter Bimberg, Nikolay A. Maleev, Zh. I. Alferov, A. E. Zhukov, D. A. Bedarev, N. N. Ledentsov, R. Heitz, A. R. Kovsh, V. M. Ustinov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 7:326-330
We have studied quantum dots (QDs) fabricated by activated spinodal decomposition (ASD) of an InGa(Al)As alloy deposited on top of self-organized InAs nanoscale stressors on GaAs substrate. Such a growth sequence results in a strong red shift of the
Autor:
B. V. Volovik, A. R. Kovsh, D. A. Bedarev, A. E. Zhukov, A. F. Tsatsul’nikov, I. L. Krestnikov, Zh. I. Alferov, Yu. M. Shernyakov, Alexandra Suvorova, P. S. Kop’ev, V. M. Ustinov, S. S. Mikhrin, I. N. Kayander, V. A. Odnoblyudov, Nikolai N. Ledentsov, Dieter Bimberg, Nikolai A. Maleev
Publikováno v:
Semiconductors. 34:594-597
A method is proposed for growing stacked InAs/InGaAs self-organized quantum dots on GaAs substrates. The technique allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region. The influence o