Zobrazeno 1 - 10
of 14
pro vyhledávání: '"D. A. Bazhanov"'
Autor:
D. A. Bazhanov
Publikováno v:
Омский научный вестник: Серия "Общество. История. Современность", Vol 8, Iss 1, Pp 90-95 (2023)
The author analyzes A. S. Puchenkov’s monograph «The first year of the Volunteer Army: from the emergence of the “Alekseevskaya Organization” to the formation of the Armed Forces in the South of Russia (November 1917– December 1918)». Th
Externí odkaz:
https://doaj.org/article/8c28c23f54324a7db21c854802950523
Autor:
A. A. Chistyakova, D. I. Bazhanov
Publikováno v:
Russian Microelectronics. 51:654-658
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575944f67d9a7a908e5870b5f40b2ba2
https://doi.org/10.1134/s1063739722080121
https://doi.org/10.1134/s1063739722080121
Autor:
D. S. Bazhanov, S. F. Bogdanova, N. A. Borisova, D. V. Bulavin, V. S. Golubev, A. A. Zaytsev, E. V. Ivanov, D. V. Kiushkin, A. N. Kukushkin, K. O. Makhov, R. V. Nechajkin
Publikováno v:
Metalloobrabotka. :56-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075090f4c9aadc66266dfcec38591d49
https://doi.org/10.25960/mo.2022.5-6.56
https://doi.org/10.25960/mo.2022.5-6.56
Autor:
D. A. Bazhanov
Publikováno v:
Вестник Пермского университета. История. :68-76
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ed5cae031483caf5c399294403ea99
https://doi.org/10.17072/2219-3111-2018-4-68-76
https://doi.org/10.17072/2219-3111-2018-4-68-76
Autor:
Vladimir A. Borodin, Ilya V. Mutigullin, D. I. Bazhanov, Irina A. Supryadkina, K. K. Abgaryan, Mariya G. Ganchenkova
Publikováno v:
Modern Electronic Materials, Vol 1, Iss 4, Pp 103-108 (2015)
Point defects play a key role in many microelectronics technologies. Knowledge of the properties of point defects and characteristics of their behavior during ion-beam synthesis of microstructures for use in silicon devices allows one to optimize the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93f63b8be14617be31b78c3d54847b91
https://doi.org/10.1016/j.moem.2016.01.002
https://doi.org/10.1016/j.moem.2016.01.002
Publikováno v:
Russian Microelectronics. 45:600-602
Studying the electronic and structural properties of AlN thin films is an important problem because such films are widely used as a buffer layer when growing GaN-based semiconductor heterostructures on Si substrates. In this paper, we carry out a the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6c8bde36a9b70898ad265b4e5ffb7d
https://doi.org/10.1134/s1063739716080011
https://doi.org/10.1134/s1063739716080011
Publikováno v:
Semiconductors. 47:1621-1625
The results of a theoretical study based on ab initio calculations of the polarization properties of AlN, GaN, and AlGaN semiconductors with the wurtzite structure are presented. The values of the spontaneous and piezoelectric polarizations, as well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::785cc513b71f8dccfacdbd2768b1a27c
https://doi.org/10.1134/s106378261312018x
https://doi.org/10.1134/s106378261312018x
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:76-80
Computer simulation of sapphire nitridation used to obtain nitride-based heterostructures (GaN) on an Al2O3 substrate has been performed. The adhesion of atomic nitrogen to the sapphire (0001) surface is investigated ab initio. The possibility of rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7cb6e507946c9a58e5ab5b02e788b2d
https://doi.org/10.1134/s1027451013010023
https://doi.org/10.1134/s1027451013010023
Publikováno v:
Microbiology. 79:374-384
The rhizosphere nitrogen-fixing bacteria Herbaspirillum frisingense B416, Burkholderia sp. 418, and Herbaspirillum huttiense B601 (degrader of chlorinated s-triazines) were identified by phylogenetic analysis of the 16S rRNA gene sequences, character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c64bba837cac3fa6f493f3c6682358
https://doi.org/10.1134/s0026261710030148
https://doi.org/10.1134/s0026261710030148
Autor:
I. V. Mutigullin, D. I. Bazhanov
Publikováno v:
Journal of Experimental and Theoretical Physics. 110:81-87
A theoretical investigation of the interaction between carbon adatoms on the Fe(001) and Fe( 111 ) surfaces is performed using ab initio calculations in terms of density functional theory. Calc ulations of the adsorption energy demonstrate the existe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bdd80bcd781ab00028a444b24ead24f
https://doi.org/10.1134/s1063776110010103
https://doi.org/10.1134/s1063776110010103