Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D. A. Abdulmalik"'
Autor:
Paul G. Coleman, D. A. Abdulmalik
Publikováno v:
Applied Surface Science. 255:71-74
The formation, migration and agglomeration in silicon of fluorine-vacancy complexes have been monitored by single-detector Doppler broadening spectroscopy. After electronics engineers found that fluorine ion implantation effectively eliminated the tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615cc093ed492134376c3f6260826ae5
https://doi.org/10.1016/j.apsusc.2008.05.168
https://doi.org/10.1016/j.apsusc.2008.05.168
Autor:
Paul G. Coleman, D. A. Abdulmalik
Publikováno v:
physica status solidi c. 4:3664-3667
Besides its conventional applications in defect characterization, variable-energy positron annihilation spectroscopy can be employed to monitor internal electric fields in the depletion regions in semiconductor structures. In this work, electric fiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5d407c343080aec72a033004c53d66
https://doi.org/10.1002/pssc.200675856
https://doi.org/10.1002/pssc.200675856
Publikováno v:
physica status solidi c. 4:3727-3730
The effect of gamma-irradiation on the structure of polymethyl methacrylate (PMMA) has been investigated. In this study, the PMMA specimens were gamma-irradiated at doses in the range of 0-1000 kGy and measured by means of positron annihilation lifet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a242eb83f6c4f8fb3d3d4e636ae9ff94
https://doi.org/10.1002/pssc.200675846
https://doi.org/10.1002/pssc.200675846
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:753-757
While the dynamics of thermal oxidation of Si has been adequately described for over three decades, details of SiGe oxidation are not entirely clear. In particular, the injection into the Si substrate of a super-saturation of interstitial defects dur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e2b858b25a8f25b95c9f16de8339ec
https://doi.org/10.1007/s10854-006-9084-5
https://doi.org/10.1007/s10854-006-9084-5
Autor:
Paul G. Coleman, I.Y. Al-Qaradawi, M.M. Emad, Mazen Khaled, Zaki S. Seddigi, D. A. Abdulmalik, Basel F. Abu-Sharkh, Abdalla M. Abulkibash, Bekir Sami Yilbas
Publikováno v:
Surface and Coatings Technology. 201:932-937
The corrosion properties of duplex-treated and nitrided Ti–6Al–4V have been investigated in 0.025, 0.25 and 2.5 M NaCl using electrochemical techniques, Positron Annihilation Spectroscopy (PAS), X-ray diffraction (XRD), Scanning Electron Microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6202b4a47813966d47473312a283c9ba
https://doi.org/10.1016/j.surfcoat.2006.01.019
https://doi.org/10.1016/j.surfcoat.2006.01.019
Autor:
D. A. Abdulmalik, Tao Wang, Paul G. Coleman, James Davies, S. J. Bingham, Peter J. Parbrook, Gazi N Aliev, S. Zeng, Daniel Wolverson
Publikováno v:
physica status solidi c. 3:1919-1922
The red (1.8 eV) photoluminescence (PL) band often observed in Mg-doped GaN has been suggested to be due to a recombination process involving vacancy-related deep defects. To identify the defects concerned, optically-detected magnetic resonance (ODMR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f895b6aaf311c58c98d9797300b358ef
https://doi.org/10.1002/pssc.200565331
https://doi.org/10.1002/pssc.200565331
Publikováno v:
Applied Surface Science. 252:3209-3214
Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 x 10 15 ions/cm 2 and after annealing between 600 and 650 °C. Doppler bro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25b9c870e8babb13cd3b678365dbd96c
https://doi.org/10.1016/j.apsusc.2005.08.072
https://doi.org/10.1016/j.apsusc.2005.08.072
Autor:
D. A. Abdulmalik, Paul G. Coleman
Publikováno v:
Physical review letters. 100(9)
The thermal evolution of vacancy-type defects in Czochralski (Cz-) and epitaxially grown (epi-) silicon has been investigated using variable-energy positron annihilation spectroscopy. Heating at 300-500 degrees C caused rapid migration of divacancies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e072db35d687ccb278d8b40eb6de7dfd
https://pubmed.ncbi.nlm.nih.gov/18352722
https://pubmed.ncbi.nlm.nih.gov/18352722
Autor:
Filadelfo Cristiano, B.J. Sealy, N. E. B. Cowern, D. A. Abdulmalik, Wilfried Lerch, Paul G. Coleman, A. J. Smith, Silke Paul
Shallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a24ff2d2c697ad6f1654d45814de202
https://surrey.eprints-hosting.org/416/
https://surrey.eprints-hosting.org/416/
Publikováno v:
Journal of Applied Physics. 102:013530
Fluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27366dceff17adc968fe2f4f71edd806
https://doi.org/10.1063/1.2753573
https://doi.org/10.1063/1.2753573