Zobrazeno 1 - 10
of 80
pro vyhledávání: '"D. Żymierska"'
Autor:
Marc Messerschmidt, Alexander Graf, Jerzy B. Pelka, Ryszard Sobierajski, D. Żymierska, Dorota Klinger, Krzysztof Wieteska, John D. Bozek, Jérôme Gaudin, Stefan P. Hau-Riege, Richard A. London, Carsten Paulmann, Wojciech Wierzchowski, Jacek Krzywinski, Stefan Moeller, Tomáš Burian, Christoph Bostedt, Jaromír Chalupský
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 364:20-26
The silicon sample irradiated with femtosecond soft X-ray pulses at the Linac Coherent Light Source has been studied with several synchrotron X-ray diffraction topographic methods at HASYLAB. The irradiations were performed for two different waveleng
Autor:
Tomáš Burian, Libor Juha, T. Balcer, H. Wabnitz, Dorota Klinger, Ryszard Sobierajski, D. Żymierska, Sven Toleikis, Thomas Tschentscher, A.J. Gleeson, Carsten Paulmann, Wojciech Wierzchowski, Harald Sinn, Jaromír Chalupský, L. Vysin, D. Sobota, K. Tiedtke, Jérôme Gaudin, Jerzy B. Pelka, Věra Hájková, Krzysztof Wieteska
Publikováno v:
Radiation Physics and Chemistry. 93:99-103
Silicon crystalline samples were exposed to intense single pulses of XUV radiation ( λ =13.5 nm) what lead to melting and ablation of the surface material. The deformation field around craters along the whole thickness of silicon wafers was observed
Autor:
D. Żymierska, Dorota Klinger, H. Wabnitz, Jérôme Gaudin, Věra Hájková, Jaromír Chalupský, Sven Toleikis, Tomáš Burian, K. Wieteska, Libor Juha, Ryszard Sobierajski, A.J. Gleeson, K. Tiedtke, W. Wierzchowski, L. Vysin, T. Balcer
Publikováno v:
Radiation Physics and Chemistry. 80:1036-1040
An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon
Publikováno v:
Radiation Physics and Chemistry. 80:1031-1035
The formation of morphological structures on an amorphised Si surface by annealing with nanosecond laser pulse is studied. The resulting structures are investigated by complementary methods: interference microscopy with Nomarski contrast, atomic forc
Autor:
D. Żymierska, B. Kozankiewicz, L. Nowicki, Dorota Klinger, Roman Minikayev, K. Nowakowska-Langier, Jerzy B. Pelka, W. Caliebe
Publikováno v:
Radiation Physics and Chemistry. 80:1064-1067
Silicon single crystals were implanted with Ge or Sn ions and then annealed by nanosecond laser beam in a single-pulse mode. The structural changes caused by the laser annealing are studied by means of the Rutherford back-scattering and X-ray diffrac
Autor:
Libor Juha, Dorota Klinger, D. Żymierska, Hamed Merdji, Stéphane Guizard, Marek Jurek, Jerzy B. Pelka, Ryszard Sobierajski, Robert Nietubyć, Jacek Krzywinski
Publikováno v:
Radiation Physics and Chemistry. 78:S71-S74
An ablation by a femtosecond laser pulses of polymethylmethacrylate was investigated in the near-infrared region. The morphological changes due to increasing laser fluency were examined. The size and shape as well as morphological forms occurring in
Publikováno v:
Materials Science in Semiconductor Processing. 9:323-326
The formation of nano-structure on an amorphised Si surface is studied upon annealing by a nanosecond laser pulse of an excimer laser. The resulting structures are studied by means of the reflection high-energy electron diffraction technique and atom
Publikováno v:
Journal of Alloys and Compounds. 382:146-152
A slab formed sample cut out from low doped Czochralski-grown silicon crystal was implanted with 117 MeV (3 MeV/nucleon) Ar ions to the dose 5 × 10 14 cm −2 and thermally annealed at 400 and 700 °C. The crystal was characterized with a number of
Autor:
B. Kozankiewicz, D. Żymierska, A. Stonert, J. Auleytner, L. Nowicki, Adam Barcz, Dorota Klinger
Publikováno v:
The European Physical Journal Applied Physics. 27:149-153
The influence of the laser annealing on the defect structure of the near-surface layer of silicon crystal implanted with 40 keV Ge ions is reported. Evolution of defect structure during nanosecond pulse laser annealing is characterised by means of se
Publikováno v:
Journal of Applied Physics. 95:2331-2336
A very disturbed near-surface layer was formed by Sn-ion implantation in a Si single crystal. For crystal lattice reconstruction of this layer and for change of the dopant distribution pulsed laser annealing was applied. In order to determine the opt