Zobrazeno 1 - 10
of 13
pro vyhledávání: '"D. C. Gilmer"'
Autor:
D. C. Gilmer, Jeffrey T. Roberts, Daniel G. Colombo, Charles J. Taylor, Stephen A. Campbell, G. D. Wilk, Wayne L. Gladfelter
Publikováno v:
Journal of the American Chemical Society. 121:5220-5229
A side-by-side comparison of the TiO2 deposition kinetics and the corresponding microstructures was studied. The two precursors were titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate, and all depositions were conducted at low pressures (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829876bc4144f0f6cbf40724798456c7
https://doi.org/10.1021/ja984446f
https://doi.org/10.1021/ja984446f
Autor:
D. C. Gilmer, J. Conner, A. Anderson, Vidya Kaushik, Hyeon Seag Kim, Stephen A. Campbell, L. Prabhu
Publikováno v:
Journal of Applied Physics. 85:3278-3281
Carbon and hydrogen free tetranitratotitanium was synthesized, which is believed to thermally decomposed primarily as: Ti(NO3)4→TiO2+4NO2+O2. The by-products of the thermal decomposition of tetranitratotitanium, which include NO2 and O2, may possib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8f29f93f1ec7250708b747987b2adca
https://doi.org/10.1063/1.369671
https://doi.org/10.1063/1.369671
Autor:
Xiao-Chuan Wang, Ming-Ta Hsieh, D. C. Gilmer, Hyeon-Seag Kim, Jinhua Yan, Stephen A. Campbell, Wayne L. Gladfelter
Publikováno v:
IEEE Transactions on Electron Devices. 44:104-109
Layers of polycrystalline anatase TiO/sub 2/ have been deposited through the thermal decomposition of titanium tetrakisisopropoxide (TTIP). 500 /spl Aring/ films deposited and annealed in oxygen at 750/spl deg/C had average roughnesses (R/sub a/) of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c978ef8a04fe233d83b9c0ed515db8dc
https://doi.org/10.1109/16.554800
https://doi.org/10.1109/16.554800
Publikováno v:
Chemical Vapor Deposition. :220-222
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9be9697333be76853ecb0581bb3aee8c
https://doi.org/10.1002/(sici)1521-3862(199812)04:06<220::aid-cvde220>3.0.co
https://doi.org/10.1002/(sici)1521-3862(199812)04:06<220::aid-cvde220>3.0.co
Publikováno v:
Applied Physics Letters. 69:3860-3862
The leakage current through 190 A TiO2 deposited through metal‐organic chemical vapor deposition on p‐type silicon substrates has been measured as a function of temperature for both accumulation and inversion biases. When biased into inversion, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ff1dceb33d93316094e149bed1c20a
https://doi.org/10.1063/1.117129
https://doi.org/10.1063/1.117129
Publikováno v:
1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.
The reliability of high permittivity films as a gate insulator is a serious concern due to small bandgaps (3.0/spl sim/4.0 eV). Ramped voltage, time dependent dielectric breakdown, and capacitance-voltage measurements were done on 190 /spl Aring/ lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6fe3da1c24bef04ed30df677b0de00
https://doi.org/10.1109/relphy.1997.584243
https://doi.org/10.1109/relphy.1997.584243
Autor:
Jeffrey T. Roberts, Glen D. Wilk, Daniel G. Colombo, D. C. Gilmer, Charles J. Taylor, Stephen A. Campbell, Wayne L. Gladfelter
Publikováno v:
MRS Proceedings. 567
A side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< 10−4 Torr) in an ultrahigh vacuum chemical vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460e275a129570e0ec8255f337e0383b
https://doi.org/10.1557/proc-567-349
https://doi.org/10.1557/proc-567-349
Autor:
Jeffrey T. Roberts, G. D. Wilk, Wayne L. Gladfelter, Michael A. Gribelyuk, Hyeon-Seag Kim, D. C. Gilmer, Daniel G. Colombo, Stephen A. Campbell, Charles J. Taylor
Publikováno v:
MRS Proceedings. 495
Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184°C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc021788870997030b2d4a41cef7dff
https://doi.org/10.1557/proc-495-45
https://doi.org/10.1557/proc-495-45
Publikováno v:
MRS Proceedings. 448
Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higher permittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d03ef41471994dc5cf90480291b16d3
https://doi.org/10.1557/proc-448-321
https://doi.org/10.1557/proc-448-321
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:1706
Thin films of TiO2 have been deposited on silicon wafers from titanium tetrakis‐isopropoxide (TTIP) and TTIP/H2O using low pressure metalorganic chemical vapor deposition. The films have been characterized by Rutherford backscattering spectrometry,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4addf942e0985b22e314c56d458001d4
https://doi.org/10.1116/1.589214
https://doi.org/10.1116/1.589214