Zobrazeno 1 - 10
of 899
pro vyhledávání: '"D., JAHAN"'
Autor:
D., JAHAN1 dr.dilshad.bd@gmail.com, M. M., ISLAM2, M. Z., HOSSAIN3, M. A., SALSABIL4, I., ISLAM5, A. K. M. Z., HUQUE6, M. E., KARIM7, MAZUMDER8, M. A., KHAN9
Publikováno v:
Journal of Dhaka Medical College. 2018, Vol. 27 Issue 2, p175-181. 7p.
Akademický článek
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Publikováno v:
Bangladesh Journal of Dental Research & Education. 4:21-25
DOI: http://dx.doi.org/10.3329/bjdre.v4i1.18012 Bangladesh Journal of Dental Research & Education Vol.4(1) 2014: 21-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc7e6f2c2f261b4ca23a67fd1cd96084
https://doi.org/10.3329/bjdre.v4i1.18012
https://doi.org/10.3329/bjdre.v4i1.18012
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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Autor:
Edenborough, Kathryn1 (AUTHOR) Kathryn.Edenborough@gmail.com, Supriyati, Endah2 (AUTHOR), Dufault, Suzanne3 (AUTHOR), Arguni, Eggi2,4 (AUTHOR), Indriani, Citra2,5 (AUTHOR), Denton, Jai6 (AUTHOR), Sasmono, R. Tedjo7 (AUTHOR), Ahmad, Riris Andono2,5 (AUTHOR), Anders, Katherine L.6,8 (AUTHOR), Simmons, Cameron P.1,6 (AUTHOR) cameron.simmons@monash.edu
Publikováno v:
Scientific Reports. 11/14/2024, Vol. 12 Issue 1, p1-10. 10p.
Autor:
Tzotzis, Anastasios1 (AUTHOR) a.tzotzis@uowm.gr, Nedelcu, Dumitru2 (AUTHOR) dnedelcu@tcm.tuiasi.ro, Mazurchevici, Simona-Nicoleta2 (AUTHOR) simona-nicoleta.mazurchevici@academic.tuiasi.ro, Kyratsis, Panagiotis1 (AUTHOR) a.tzotzis@uowm.gr
Publikováno v:
Polymers (20734360). Oct2024, Vol. 16 Issue 20, p2927. 21p.
Publikováno v:
Asian Journal of Plant Sciences. 7:500-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c9a703bdf24930bc876a2a2e6aefda
https://doi.org/10.3923/ajps.2008.500.504
https://doi.org/10.3923/ajps.2008.500.504
Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties
Publikováno v:
IEE Proceedings - Optoelectronics. 151:279-283
The authors further investigate the influence of growth temperature (Tg) on GaInNAs QWs grown on GaAs. 7 nm-thick GaInNAs QWs were grown with Tg in the range 400–470 °C. As a first result, transmission electron microscopy clearly showed that flat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4df5773b591e603973cf938c86ac5bd4
https://doi.org/10.1049/ip-opt:20040888
https://doi.org/10.1049/ip-opt:20040888
Autor:
A. Martinez, Jean Landreau, J.C. Harmand, Laurence Ferlazzo, J.-G. Provost, A. Ramdane, Vincent Sallet, D. Jahan, O. Le Gouezigou, Beatrice Dagens
Publikováno v:
IEE Proceedings - Optoelectronics. 151:429-432
Static performances and high-frequency characterisation of a GaInNAs/GaAs laser diode emitting at 1.35 μm are reported. Optimised molecular beam epitaxial (MBE) growth has allowed the achievement of a triple quantum well stack for improved dynamic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0dfd6e403639b95e3ff655d1c97f9c
https://doi.org/10.1049/ip-opt:20040878
https://doi.org/10.1049/ip-opt:20040878
Publikováno v:
Journal of Crystal Growth. 225:9-15
Temporally resolved selective area growth of InP on patterned substrates with openings off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral ove ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f57ff2b4b36821319b51910ba7deb8d
https://doi.org/10.1016/s0022-0248(01)00970-8
https://doi.org/10.1016/s0022-0248(01)00970-8