Výsledky vyhledávání - "D W E Allsopp"

Quantum Sensing and Nanophotonic Devices VIII

Autor: W. N. Wang, P. A. Shields, C. Liu, D. W. E. Allsopp, F. Causa

Publikováno v: Proc. SPIE, San Francisco, CA, 24 January 2010 through 28 January 2010
info:cnr-pdr/source/autori:W. N. Wang, P. A. Shields, C. Liu, D. W. E. Allsopp, F. Causa/congresso_nome:Proc. SPIE/congresso_luogo:San Francisco, CA/congresso_data:24 January 2010 through 28 January 2010/anno:2011/pagina_da:/pagina_a:/intervallo_pagine

The proceedings contain 76 papers. The topics discussed include: mid-IR quantum cascade lasers as an enabling technology for a new generation of chemical analyzers for liquids; quantum cascade laser sensors for online gas chromatography; high finesse

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::7a69cd421c74a1b69bda8650ca5442e8
https://publications.cnr.it/doc/382744

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Reduced Threshold Current in Bipolar Diode Lasers by Non-square Quantum Well Growth

Autor: W Batty, KA Kaduki, D W E Allsopp, A Ghiti

Publikováno v: Physica Scripta. 67:68-73

By device simulation, it is shown that non-square quantum well growth (well shaping) provides a means for reducing the threshold current of bipolar quantum well diode lasers. Calculations of subband structure, optical matrix elements and laser gain a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa1165f11b64fbf79f8cea0915e64dec
https://doi.org/10.1238/physica.regular.067a00068

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[Untitled]

Autor: D. W. E. Allsopp, A. Bhatnagar, R. Grey

Publikováno v: Optical and Quantum Electronics. 31:1189-1206

The Wannier–Stark effect has been investigated in strongly coupled three quantum well structures and 23.5 period superlattices consisting of 25 A wide GaAs wells separated by Al0.25Ga0.75As barriers of the same width. A blue shift associated with t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb56a69d66ae9b150ed5443d8e22f51a
https://doi.org/10.1023/a:1007058925698

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Non-ideal current - voltage characteristics in MBE-grown heterojunction bipolar transistors

Autor: V Roberts, D W E Allsopp

Publikováno v: Semiconductor Science and Technology. 11:1346-1353

The current - voltage characteristics of heterojunction bipolar transistors and Si homojunction bipolar transistors grown by MBE have been measured with the aim of elucidating the causes of degraded common-emitter gain and low . It is shown that high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf443a665082215f1314259087a47194
https://doi.org/10.1088/0268-1242/11/9/017

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A simplified self-consistent model of charge control in quasi-square quantum well HFETs

Autor: D W E Allsopp, R T Carline

Publikováno v: Semiconductor Science and Technology. 6:1151-1157

A new, approximate model for determining the one-dimensional charge control characteristics of quasi-square quantum well channel heterojunction field-effect transistors is presented. The model involves solving self-consistently the one-dimensional fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::270820479ba2d671aa3c8b810cd6f5c6
https://doi.org/10.1088/0268-1242/6/12/009

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The performance of doping interface dipoles in heterostructures

Autor: D W E Allsopp, S P Wilson

Publikováno v: Semiconductor Science and Technology. 5:952-960

The modulation of the potential barrier of an isotype heterojunction by the incorporation during epitaxial growth of thin, heavily doped n and p regions either side of the heterointerface has been investigated by computer modelling. The resulting dev

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92322b9adee128d35d508202f0ab5920
https://doi.org/10.1088/0268-1242/5/9/005

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