Zobrazeno 1 - 10
of 703
pro vyhledávání: '"D Schuh"'
Publikováno v:
New Journal of Physics, Vol 17, Iss 2, p 023007 (2015)
We use GaAs-based quantum point contacts as mesoscopic detectors to locally analyze the flow of photogenerated electrons in a two-dimensional electron gas (2DEG) at perpendicular, quantizing magnetic fields. The 2DEG is formed within a quantum well o
Externí odkaz:
https://doaj.org/article/442555b25bb940d0827470f694556556
Publikováno v:
New Journal of Physics, Vol 17, Iss 4, p 043035 (2015)
We investigate both, experimentally and theoretically, commensurability oscillations in the low-field magnetoresistance of lateral superlattices with broken inversion symmetry. We find that pronounced minima develop in the resistivity ${{\rho }_{xx}}
Externí odkaz:
https://doaj.org/article/df49f54c83e2494abf2b7b3f13e62360
Autor:
A. Kvas, J. M. Brockmann, S. Krauss, T. Schubert, T. Gruber, U. Meyer, T. Mayer-Gürr, W.-D. Schuh, A. Jäggi, R. Pail
Publikováno v:
Earth System Science Data, Vol 13, Pp 99-118 (2021)
GOCO06s is the latest satellite-only global gravity field model computed by the GOCO (Gravity Observation Combination) project. It is based on over a billion observations acquired over 15 years from 19 satellites with different complementary observat
Externí odkaz:
https://doaj.org/article/13333f67c1614ce4804c41d1ce2c4208
Publikováno v:
Physics Letters B, Vol 810, Iss , Pp 135810- (2020)
Jets are important probes of heavy ion collisions as they can provide information on the interaction of a highly energetic parton with the medium it traverses. In the hydrodynamic stage of dense, strongly interacting matter, these interactions can be
Externí odkaz:
https://doaj.org/article/2a591729e7f1495a832c06a44e1ed0f6
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-7 (2017)
The development of spin field effect transistors has been hampered by the low magnetoresistance in the semiconductor spin valve. Here the authors report large and tunable magnetoresistance in a lateral 2DES-based spin valve geometry due to finite ele
Externí odkaz:
https://doaj.org/article/4ab490f6b4224ff5b33144948c65104a
Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature
Autor:
L. Chen, M. Decker, M. Kronseder, R. Islinger, M. Gmitra, D. Schuh, D. Bougeard, J. Fabian, D. Weiss, C. H. Back
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Interfacial spin-orbit torque allows electrical manipulation of magnetization, but this has been shown mostly in polycrystalline metal bilayers. Here the authors show robust spin-orbit torque in single crystalline Fe/GaAs interface at room temperatur
Externí odkaz:
https://doaj.org/article/700f879ff7b84b6dad51acaf8bb232a9
Autor:
E. Monch, P. Euringer, G.-M. Huttner, I. A. Dmitriev, D. Schuh, M. Marocko, N. N. Mikhailov, S. A. Dvoretsky, K. Watanabe, T. Taniguchi, J. Eroms, D. Bougeard, D. Weiss, S. D. Ganichev
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe2b74a7afdee3085cf22bb422ce391d
https://doi.org/10.1109/irmmw-thz50927.2022.9895950
https://doi.org/10.1109/irmmw-thz50927.2022.9895950
Autor:
Andreas M. Bapst, Thomas Knöpfel, Karen A. Nolan, Faik Imeri, Claus D. Schuh, Andrew M. Hall, Jia Guo, Dörthe M. Katschinski, Roland H. Wenger
Publikováno v:
Journal of Cellular Physiology. 237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81369207645b5fecb2342c999c5d9d00
https://doi.org/10.1002/jcp.30804
https://doi.org/10.1002/jcp.30804
Autor:
S. D. Ganichev, S. N. Danilov, M. Kronseder, D. Schuh, I. Gronwald, D. Bougeard, E. L. Ivchenko, A. Ya. Shul’man
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ff5ca9500e0ba900d006cfd9bb518f2
https://doi.org/10.1007/s10762-021-00823-5
https://doi.org/10.1007/s10762-021-00823-5
Autor:
C. Gradl, R. Winkler, M. Kempf, J. Holler, D. Schuh, D. Bougeard, A. Hernández-Mínguez, K. Biermann, P. V. Santos, C. Schüller, T. Korn
Publikováno v:
Physical Review X, Vol 8, Iss 2, p 021068 (2018)
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to common spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropi
Externí odkaz:
https://doaj.org/article/913469fdb81643628746b167ed72eb7f