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pro vyhledávání: '"D Schmeißer"'
Autor:
A. Obstarczyk, D. Kaczmarek, D. Wojcieszak, M. Mazur, J. Domaradzki, T. Kotwica, R. Pastuszek, D. Schmeisser, P. Mazur, M. Kot
Publikováno v:
Materials & Design, Vol 175, Iss , Pp - (2019)
In this work multi-magnetron sputtering stand was used for the deposition of the mixed oxides thin films based on HfO2 and TiO2. In order to obtain various material composition the power released to each magnetron (containing metallic hafnium and tit
Externí odkaz:
https://doaj.org/article/4c2b780cc15c458eba147739f6433482
Autor:
Denise B. Schwartz
Publikováno v:
Nutrition in Clinical Practice. 6:159-159
Akademický článek
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Autor:
Schwartz, Denise B.
Publikováno v:
Nutrition in Clinical Practice; August 1991, Vol. 6 Issue: 4 p159-159, 1p
Autor:
Rakhi1 (AUTHOR) maussf@b-tu.de, Mauss, Fabian1 (AUTHOR)
Publikováno v:
Catalysts (2073-4344). Sep2024, Vol. 14 Issue 9, p562. 20p.
Publikováno v:
Thin Solid Films. 428:216-222
The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 μm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-
Publikováno v:
Applied Physics A: Materials Science & Processing. 76:177-182
Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-μ-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orient
Autor:
Thomas Seyller, D. Schmeisser, N. Sieber, R. P. Mikalo, P. Hoffmann, Lothar Ley, David Batchelor, Ralf Graupner
Publikováno v:
Materials Science Forum. :717-720
Autor:
Kot M; Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany., Gawlińska-Nęcek K; Institute of Metallurgy and Materials Science Polish Academy of Sciences, Reymonta 25 St., Krakow, 30-059, Poland., Henkel K; Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany., Flege JI; Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg, Konrad-Zuse-Straße 1, 03046, Cottbus, Germany.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Nov 13, pp. e2408435. Date of Electronic Publication: 2024 Nov 13.
Autor:
Babu A; Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, 140306, India., Abraham BM; Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB) Universitat de Barcelona, c/ Martí i Franquès 1-11, Barcelona, 08028, Spain., Naskar S; Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, 140306, India., Ranpariya S; Department of Science and Humanities, Indian Institute of Information Technology Vadodara, Gandhinagar, Gujarat, 382028, India.; Department of Physics, Indus Institute of Sciences, Humanities & Liberal Studies (IISHLS), Indus University, Ahmedabad, Gujarat, 382115, India., Mandal D; Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, 140306, India.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Oct 14, pp. e2405393. Date of Electronic Publication: 2024 Oct 14.