Zobrazeno 1 - 10
of 16
pro vyhledávání: '"D S Rawal"'
Autor:
Khushwant Sehra, null Chanchal, Anupama Anand, Vandana Kumari, null Reeta, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena
Publikováno v:
IEEE Transactions on Electron Devices. 70:2612-2615
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64cf2a29e4f7629d119c14bffeafabc
https://doi.org/10.1109/ted.2023.3262228
https://doi.org/10.1109/ted.2023.3262228
Autor:
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125231-125231-5 (2019)
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky
Externí odkaz:
https://doaj.org/article/f70925930d7a41f7bb2d3583c770d973
Autor:
Jagori Raychaudhuri, Jayjit Mukherjee, Rajesh Bag, Amit Malik, Sudhir Kumar, D. S. Rawal, Meena Mishra, Santanu Ghosh
Publikováno v:
Silicon. 14:12505-12512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9539c70a724a7637638fddbf3fd1fe97
https://doi.org/10.1007/s12633-022-01951-w
https://doi.org/10.1007/s12633-022-01951-w
Autor:
Ajay Kumar Visvkarma, Khushwant Sehra, null Chanchal, Robert Laishram, Amit Malik, Sunil Sharma, Sudhir Kumar, D. S. Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
IEEE Transactions on Electron Devices. 69:2299-2306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8008492cabaf4e039196f992ea9de31
https://doi.org/10.1109/ted.2022.3161402
https://doi.org/10.1109/ted.2022.3161402
Autor:
Kapil Narang, Vikash K. Singh, Akhilesh Pandey, Ruby Khan, Rajesh K. Bag, D. S. Rawal, M. V. G. Padmavati, Renu Tyagi, Rajendra Singh
Publikováno v:
Journal of Materials Science. 57:5913-5923
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86bcbbcab80f430619e9d22e5ffc8662
https://doi.org/10.1007/s10853-022-07017-x
https://doi.org/10.1007/s10853-022-07017-x
Publikováno v:
Journal of Semiconductors. 44:042802
Trap characterization on GaN Schottky barrier diodes (SBDs) has been carried out using deep-level transient spectroscopy (DLTS). Selective probing by varying the ratio of the rate window values (r) incites different trap signatures at similar tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c732cebecbd556bf4334e0951f01a7
https://doi.org/10.1088/1674-4926/44/4/042802
https://doi.org/10.1088/1674-4926/44/4/042802
Autor:
Chanchal Chanchal, Ajay Kumar Visvkarma, Amit Malik, Robert Laishram, D S Rawal, Manoj Saxena
Publikováno v:
2022 IEEE VLSI Device Circuit and System (VLSI DCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4a3c2c56a5e1d242f7787e06ab9baa
https://doi.org/10.1109/vlsidcs53788.2022.9811463
https://doi.org/10.1109/vlsidcs53788.2022.9811463
Publikováno v:
Communications in Computer and Information Science ISBN: 9783031215131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa44cfcf545a23350b5b3212286e1ccc
https://doi.org/10.1007/978-3-031-21514-8_6
https://doi.org/10.1007/978-3-031-21514-8_6
Autor:
Ajay Kumar Visvkarma, Robert Laishram, Sonalee Kapoor, D S Rawal, Seema Vinayak, Manoj Saxena
Publikováno v:
Semiconductor Science and Technology. 37:085006
This article reports a Ti/Al-based ohmic contact utilizing a thin interfacial Au layer for improved morphology, edge acuity and low contact resistance for applications to III-Nitride high electron mobility transistors (HEMTs). Conventional Ti/Al cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c9b258e67f2f77846104cbbde3654e
https://doi.org/10.1088/1361-6641/ac6f79
https://doi.org/10.1088/1361-6641/ac6f79
Publikováno v:
Semiconductor Science and Technology. 37:065014
Reverse gate leakage, I G, limits the reliability of gallium nitride high electron mobility transistors. We extract the components of I G flowing into the edge and area of the gate from the measured I G versus gate to source voltage, V GS, data of bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1558c595d9a79553906ea3e0e4aca1fc
https://doi.org/10.1088/1361-6641/ac65ab
https://doi.org/10.1088/1361-6641/ac65ab