Zobrazeno 1 - 2
of 2
pro vyhledávání: '"D S Mcgregor"'
Publikováno v:
AIP Conference Proceedings.
A high-energy neutron detector has been developed using a semiconductor diode fabricated from bulk gallium arsenide wafers with a polyethylene neutron converter layer. Typical thickness of the diode layer is 250 to 300 μm with bias voltages of 30 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b78d0c54bf24a83cfe07ef48b6817f6d
https://doi.org/10.1063/1.1395501
https://doi.org/10.1063/1.1395501
