Zobrazeno 1 - 10 of 106 pro vyhledávání: '"D S, Yee"'
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4
Screening of coherent LO phonons by interwell plasmon oscillations along the growth direction in GaAs/AlGaAs superlattices
Autor: Ki-Ju Yee, Dai-Sik Kim, Yong-Sik Lim, D. S. Yee, Thomas Dekorsy, G. C. Cho
Publikováno v: Physical Review B. 60:R8513-R8516
We study coherent phonon oscillations in GaAs/AlGaAs superlattices and multiple quantum wells as a function of the barrier width. Strong, bulklike screened LO phonons accompany bare LO phonons for thin barrier samples, whereas for thicker barrier sam
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce52f710a2b6adbbf1690b9c0a780f95
https://doi.org/10.1103/physrevb.60.r8513
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7
Magneto-optical Kerr effect study of GaMnAs layers
Autor: E Vanelle, Lars Ilver, J. P. Redoules, Janusz Sadowski, D Hrabovsky, Janusz Kanski, D. S. Yee, Albert Fert
Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 17:349-351
The magnetization reversal is investigated in (Ga,Mn)As thin films using magneto-optical Kerr effect. The results demonstrate a reversal behavior analogous to that observed in metallic magnetic layers (coherent rotation followed by nucleation propaga
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ddad468437730391c7ddc79315d1f05
https://doi.org/10.1016/s1386-9477(02)00804-4
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8
Magnetization reversal in GaMnAs layers studied by Kerr effect
Autor: Janusz Sadowski, E. Vanelle, Albert Fert, Janusz Kanski, Lars Ilver, D. Hrabovsky, D. S. Yee, J. P. Redoules
Publikováno v: Applied Physics Letters. 81:2806-2808
In this letter, magnetization reversal is investigated in (Ga,Mn)As thin films using the magneto-optical Kerr effect. A Stoner–Wohlfart model, modified to take into account the existence of magnetic reversal discontinuities associated with nucleati
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b457069181003023355a03ba39cc396f
https://doi.org/10.1063/1.1506204
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9
Terahertz Generation (0.3–0.8THz) Achieved by Photomixer Based on Low-temperature Grown InGaAs Emitter
Autor: J. O. Kim, S. J. Lee, D. S. Yee, S. K. Noh, J. H. Shin, K. H. Park, D. W. Park, Jin S. Kim, Jong S. Kim, Jisoon Ihm, Hyeonsik Cheong
Publikováno v: AIP Conference Proceedings.
Continuous‐wave (CW) terahertz (THz) generation has been successfully achieved by low‐temperature grown (LTG) In1−xGaxAs (x = 0.47) epitaxial layer as a THz emitter and a photomixer module with dual‐wavelength laser as an optical beat source.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f17b18ce3cbb8a073d13d2ed1e111f1f
https://doi.org/10.1063/1.3666677
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10
Highly Resistive and Ultrafast Fe-Ion Implanted InGaAs for the Applications of THz Photomixer and Photoconductive Switch
Autor: J. H. Shin, K. H. Park, N. Kim, C. W. Lee, E. D. Shim, Y. C. Kim, D.-S. Yee, J. O. Kim, S. J. Lee, S. K. Noh, Jisoon Ihm, Hyeonsik Cheong
Publikováno v: AIP Conference Proceedings.
We develop highly‐resistive (i.e. low‐carrier‐density) and ultrafast Fe‐ion implanted InGaAs layers for the applications of THz photomixer and photoconductive switch. The measured Hall mobility, sheet resistance, carrier density, and carrier
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7b33bf361d1cb89a341c0e5d2555f8a
https://doi.org/10.1063/1.3666684
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