Zobrazeno 1 - 10
of 49
pro vyhledávání: '"D S, Green"'
Autor:
Emma Messman, Phil Cogdill, John Williams, D. S. Green, Suzanne Butler, Jennen Peterson, Carlos Taira
Publikováno v:
Biomedical instrumentationtechnology. 54(s1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::820ad9f5416fb3b08b37c22fc06acab3
https://pubmed.ncbi.nlm.nih.gov/34169980
https://pubmed.ncbi.nlm.nih.gov/34169980
Publikováno v:
International Symposium on Microelectronics. 2018:000246-000251
DARPA is leading a new thrust to leverage mainstream semiconductor design approaches to enable the rapid and cost-effective integration of heterogeneous device technologies. This represents a leap ahead beyond the monolithic silicon approach that has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::527063e58e230fcfdccc89284909e0d6
https://doi.org/10.4071/2380-4505-2018.1.000246
https://doi.org/10.4071/2380-4505-2018.1.000246
Publikováno v:
Ciencias Marinas, Vol 36, Iss 3 (2010)
Assessing the health of wildlife populations is critical to achieving conservation goals; however, proper assessments can be complicated when study sites are difficult to reach or when focal species are sensitive to human disturbance. Condition and g
Externí odkaz:
https://doaj.org/article/8297fe3f95c54c70aa5d5611d3e4569b
Publikováno v:
IEEE Microwave Magazine. 18:44-59
The Microsystems Technology Office of the U.S. Defense Advanced Research Projects Agency (DARPA) is developing revolutionary materials, devices, and integration techniques to meet the performance requirements for advanced microwave and millimeter-wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15636cf3ed09ba62be91083a56690914
https://doi.org/10.1109/mmm.2016.2635811
https://doi.org/10.1109/mmm.2016.2635811
Publikováno v:
IEEE Transactions on Electron Devices. 58:1091-1095
We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fb31e1549e82fdfd75af30cf971231
https://doi.org/10.1109/ted.2011.2107913
https://doi.org/10.1109/ted.2011.2107913
Publikováno v:
IEEE Microwave Magazine. 10:116-127
High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-added efficiency. But widespread adoption of these HFETs has been limited by a lack of acceptable reliability data for practical communications and radar applicatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c5f3ac80ee03ff79c9e20747f39b93
https://doi.org/10.1109/mmm.2009.932286
https://doi.org/10.1109/mmm.2009.932286
Autor:
R. Vetury, Bharath Vembu, Shawn R. Gibb, David Hepper, D. S. Green, Daniel Jin, L. Thomas Beechem, Jeffrey B. Shealy, Samuel Graham
Publikováno v:
physica status solidi c. 5:2026-2029
GaN HEMT reliability evaluation in a typical Arrhenius manner requires establishing peak junction temperature for a particular stress condition. Several new techniques have yielded promising results toward establishing peak temperature for these devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f37afbccc74a4c117c7d83ed376a72ae
https://doi.org/10.1002/pssc.200778722
https://doi.org/10.1002/pssc.200778722
Publikováno v:
3DIC
The DARPA Microsystems Technology Office is developing revolutionary materials, devices, and integration techniques for meeting the performance requirements for advanced microwave and RF systems. The DARPA Compound Semiconductor Materials on Silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10b6ded0aacc05e82cfdd2eb7510d33d
https://doi.org/10.1109/3dic.2015.7334469
https://doi.org/10.1109/3dic.2015.7334469
Autor:
Umesh K. Mishra, Andrew M. Armstrong, D. S. Green, James S. Speck, Steven A. Ringel, Aaron R. Arehart
Publikováno v:
physica status solidi (c). 2:2411-2414
A novel method to characterize deep levels in wide bandgap, semi-insulating materials is presented. This new method combines deep level optical spectroscopy with a lighted capacitance-voltage profiling method to study the defect spectra of n-type and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03f633e1a76ef29419d71367556172e4
https://doi.org/10.1002/pssc.200461594
https://doi.org/10.1002/pssc.200461594
Publikováno v:
Journal of Applied Physics. 95:8456-8462
Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epitaxy of GaN. Secondary ion mass spectroscopy was used to quantify incorporation behavior. Carbon was found to readily incorporate under Ga-rich and N-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a494e767bc2865cca0ab09e223dd5425
https://doi.org/10.1063/1.1755431
https://doi.org/10.1063/1.1755431