Zobrazeno 1 - 10
of 13
pro vyhledávání: '"D S, Day"'
Publikováno v:
Pediatric radiology. 30(9)
Background. An inflammatory pseudotumor is a benign, solid lesion of unclear etiology. Some authors believe it is a true neoplasm, while others consider it a post-infectious or post-traumatic process. It is most commonly found in the lung; an inflamm
Publikováno v:
Annals of clinical and laboratory science. 27(2)
Two rare de novo cases are presented of pediatric erythroleukemia (EL), AML-M6 in a four-month-old (patient A) and four-year-old (patient B) African-Americans who presented to the Medical College of Georgia from 1989 to 1995. The clinical, morphologi
Publikováno v:
Medicine & Science in Sports & Exercise. 31:S149
Publikováno v:
Canadian Journal of Earth Sciences. 11:1314-1319
A small alkaline ultramafic intrusion in central Newfoundland is dated as 135 ± 8 m.y. old and 139 ± 9 m.y. old by the K–Ar method on biotite. This is the first known Mesozoic pluton (aside from dikes) in Newfoundland. The occurrence, composition
Publikováno v:
Journal of Applied Physics. 50:188-192
Fluorine distribution profiles for silicon implanted with BF+2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion o
Publikováno v:
Journal of Electronic Materials. 10:445-453
An electron trap with a thermal activation energy of 0.83 eV from the conduction band is common in the deep level transient spectroscopy (DLTS) spectra of vapor phase epitaxial (VPE) n-GaAs, but is not observed in the DLTS spectra of as-grown molecul
Publikováno v:
Review of Scientific Instruments. 50:1571-1573
A Deep Level Transient Spectroscopy (DLTS) system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge employing the diode to be tested along with a dummy diode of similar characteristics is used. T
Publikováno v:
Applied Physics Letters. 39:260-262
The redistribution and gettering of 16O in Si within boron‐implanted regions has been investigated using transmission electron microscopy and secondary‐ion mass spectrometry profiling. It has been shown that low‐temperature (⩽ 600 °C) second
Publikováno v:
Applied Physics Letters. 39:413-415
Redistribution and gettering of mobile oxygen into damage regions of As‐implanted (111) Si have been investigated using transmission electron microscopy and secondary ion mass spectrometry profiling. Rapid motion and gettering of 16O into near‐su
Autor:
L. J. Palkuti, Charles A. Evans, C. Leung, L. A. Christel, J. F. Gibbons, H. Kawayoshi, T. J. Magee, B. K. Furman, D. S. Day
Publikováno v:
Applied Physics Letters. 39:564-566
The redistribution of recoil oxygen implants produced by the implantation of As ions through oxide layers on Si substrates has been investigated at annealing temperatures in the range 4000–1000 °C. Using transmission electron microscopy and second