Zobrazeno 1 - 10
of 21
pro vyhledávání: '"D R Wight"'
Publikováno v:
Semiconductor Science and Technology. 10:344-347
Measurements of breakdown voltage in p-i-n diodes with thin i regions are compared with local and non-local theoretical calculations. It is found that overshoot effects compensate for the dead space at high fields close to breakdown but that non-loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27d87e092e07abf12f82fb389738620d
https://doi.org/10.1088/0268-1242/10/3/018
https://doi.org/10.1088/0268-1242/10/3/018
Publikováno v:
Integrated Photonics Research.
It is often the case that semiconductor rib waveguides are fabricated on substrates with refractive indices that are equal to or larger than those of the principal guiding layers. This is particularly the case in the GaAs/AlGaAs material system (for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a6b2f07442ffb14b95bc05f9d6513a
https://doi.org/10.1364/ipr.1994.thf2
https://doi.org/10.1364/ipr.1994.thf2
Publikováno v:
Physical Review Letters. 38:1164-1167
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0581d1f4efe6989028c780ca3c1bce41
https://doi.org/10.1103/physrevlett.38.1164
https://doi.org/10.1103/physrevlett.38.1164
Publikováno v:
Journal of Physics D: Applied Physics. 16:2317-2321
The effect of the deposition of caesium overlayers on (111)A and (111)B epitaxial p-type CdTe has been studied in order to assess the potential of such material for use in NEA photoemission devices. It was found that, although clean CdTe surfaces wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658677b6dabc8e4cd83b8465ef474857
https://doi.org/10.1088/0022-3727/16/12/009
https://doi.org/10.1088/0022-3727/16/12/009
Publikováno v:
Journal of Applied Physics. 50:6373-6385
Details of a method for the characterization of deep levels with large capture cross sections for minority carriers are presented. This technique has been used to investigate centers in gallium phosphide. Two defects at EV+0.75 eV and EV+0.95 eV are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ba5404e0f62d373b76562e0439ca40
https://doi.org/10.1063/1.325728
https://doi.org/10.1063/1.325728
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4002aa1e3a9128099a6dd994d6b62805
https://doi.org/10.1051/jphyscol:1983428
https://doi.org/10.1051/jphyscol:1983428
Publikováno v:
Physical Review B. 23:5495-5510
At high recombination rates, minority carrier recombination at defects in crystals ceases to obey Shockley-Read theory, and diffusion theory should be applied. These theories for neutral plane, line, and point defects are compared and used to interpr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40dced1be6d78d2334604304064895ba
https://doi.org/10.1103/physrevb.23.5495
https://doi.org/10.1103/physrevb.23.5495
Autor:
D R Wight
Publikováno v:
Journal of Physics D: Applied Physics. 10:431-454
The present understanding of the operation of green-emitting GaP LEDs is reviewed. All existing visible LED devices which are made in III-V compound semiconductors are inefficient. In green-luminescent GaP this inefficiency is becoming understood, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4513bd04ca91f56cf61180aa460daa9d
https://doi.org/10.1088/0022-3727/10/4/010
https://doi.org/10.1088/0022-3727/10/4/010
Publikováno v:
Journal of Physics D: Applied Physics. 7:1824-1837
The minority carrier diffusion length and lifetime have been determined in Zn-doped p-type and in undoped and S-doped n-type GaP grown by liquid phase epitaxy, from the spectral response of Schottky diodes, and the decay of cathodoluminescence respec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9312dffd79e4b26bd1e106b35db5c1f9
https://doi.org/10.1088/0022-3727/7/13/308
https://doi.org/10.1088/0022-3727/7/13/308
Publikováno v:
Solid-State Electronics. 28:611-615
The methods of radiotracer diffusion profiling and deep level profiling have been combined to investigate the behaviour of chromium atoms diffused into highly n-type GaAs epitaxial layers. Strong electric fields are found to cause distortion of DLTS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59d64d3df2970deb04e8217abca61b41
https://doi.org/10.1016/0038-1101(85)90133-9
https://doi.org/10.1016/0038-1101(85)90133-9