Zobrazeno 1 - 10
of 26
pro vyhledávání: '"D R, Choudhury"'
Publikováno v:
AI & Society. 17:375-382
The prime objective of this paper is to conduct phoneme categorization experiments for Indian languages. In this direction a major effort has been made to categorize Hindi phonemes using a time delay neural network (TDNN), and compare the recognition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe6dbffc0dc559b8794fc147978a284
https://doi.org/10.1007/s00146-003-0263-0
https://doi.org/10.1007/s00146-003-0263-0
Publikováno v:
Nepal Medical College journal : NMCJ. 13(4)
Intestinal worm infestation is one of the major childhood health problem in Nepal. This study was done to assess the prevalence of intestinal worm infestations among school children aged 6-16 years in a public high school in Kathmandu Nepal. A total
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b80dd0d543c8bb809853d1511188236d
https://pubmed.ncbi.nlm.nih.gov/23016478
https://pubmed.ncbi.nlm.nih.gov/23016478
Publikováno v:
AI & Society; Nov2003, Vol. 17 Issue 3/4, p375-382, 8p
Publikováno v:
Czechoslovak Journal of Physics. 31:905-912
In the present work, an attempt is made to derive expressions for the diffusivity-mobility ratios of the carriers in n-channel inversion layers on small-gap semiconductors under both weak and strong electric field limits in the presence of a quantizi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d258f6bf60bfe1131c89f40a837674bf
https://doi.org/10.1007/bf01603786
https://doi.org/10.1007/bf01603786
On the gate-controlled surface capacitance of MOS structures of Si having n-channel inversion layers
Publikováno v:
Czechoslovak Journal of Physics. 30:1157-1160
An attempt is made to work out a simple theory of gate-controlled MOS capacitance based on the triangular potential-well approximation. The predicted dependence of the capacitance on gate voltage is in excellent qualitative agreement with the recent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee4f852322817be4ce6f4fabcfa17d9
https://doi.org/10.1007/bf01604476
https://doi.org/10.1007/bf01604476
Publikováno v:
Physica Status Solidi (a). 38:K85-K88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7ca6465591e7f6344758d24d5a361b4
https://doi.org/10.1002/pssa.2210380168
https://doi.org/10.1002/pssa.2210380168
Publikováno v:
Czechoslovak Journal of Physics. 30:1161-1166
An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3a5baac17d4ccd5f995ff98ac629812
https://doi.org/10.1007/bf01604477
https://doi.org/10.1007/bf01604477
Publikováno v:
The Journal of Organic Chemistry. 41:187-191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797b505789ae0fdf978ee67662092d6a
https://doi.org/10.1021/jo00864a002
https://doi.org/10.1021/jo00864a002
Publikováno v:
Physica Status Solidi (a). 59:K211-K215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19100fea4e7f00be498584bd714c46b8
https://doi.org/10.1002/pssa.2210590277
https://doi.org/10.1002/pssa.2210590277
Publikováno v:
Applied Physics. 22:145-148
An attempt is made to investigate the effect of a quantizing magnetic field on the capacitance of MOS structures of small-gap semiconductors havingn-channel inversion layers under the weak electric-field limit. It is found, takingn-channel InSb as an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04821d83b40e2c852335a9862fbd157a
https://doi.org/10.1007/bf00885997
https://doi.org/10.1007/bf00885997