Zobrazeno 1 - 10
of 33
pro vyhledávání: '"D R, Chopra"'
Ayurveda is the medical system which promotes knowledge about the effect of everything existing in the universe with reference existing in the universe with reference to their qualities and pharmacological activities and whether beneficial acticities
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:699-703
Zirconium Lα radiation has been utilized to investigate the chemical bonding in silicon compounds by x‐ray photoelectron spectroscopy. The compounds studied in the present investigation are SiO2, SiO, SiC, Si3N4, and silicon‐oxynitrides. The spe
Autor:
A. R. Chourasia, D. R. Chopra
Publikováno v:
Surface Science Spectra. 3:74-81
Elemental manganese has been studied by x‐ray photoelectron spectroscopy. Mg Kα and Zr Lα radiations were used as excitation sources for the study. In the literature a range of values has been reported for Mn core levels using Mg radiation. The p
Autor:
G. E. McGuire, M. A. Ray, Steven J. Simko, F. Keith. Perkins, Susan L. Brandow, Elizabeth A. Dobisz, R. J. Nemanich, A. R. Chourasia, D. R. Chopra
Publikováno v:
Analytical Chemistry. 65:311-333
Autor:
D. R. Chopra, A. R. Chourasia
Publikováno v:
Surface Science Spectra. 2:117-122
The Si3N4 sample was grown by chemical vapor deposition on a Si substrate at 900 °C using a mixture of SiH4, NH3, and H2 gases. Prior to deposition the Si wafer was cleaned in HCl vapor at about 1050 °C. The formation of Si3N4 was checked by x‐ra
Autor:
J E, Fulghum, G E, McGuire, I H, Musselman, R J, Nemanich, J M, White, D R, Chopra, A R, Chourasia
Publikováno v:
Analytical chemistry. 61(12)
Autor:
A. R. Chourasia, D. R. Chopra
Publikováno v:
Surface Science Spectra. 1:233-237
Thin films of TiN were deposited from TiCl4, NH3, and H2 in a lamp heated single wafer ‘‘warm wall’’ low pressure chemical vapor deposition reactor. The deposition was carried out on a TiSi2/Si sample. The thickness of the films is estimated
Publikováno v:
Surface Science Spectra. 1:75-79
A thin film of aluminum nitride was deposited on Si(111) by reactive rf magnetron sputtering. The sputtering was carried out from a Al target (99.999%purity) in an Ar and N2 atmosphere. The films are analyzed by x‐ray photoelectron spectroscopy. Th
Publikováno v:
Analytical Chemistry. 63:99-118
Autor:
C. Lin, R. C. Hyer, Suresh C. Sharma, M. Green, Jose M. Perez, A. R. Chourasia, D. R. Chopra, W. Rivera
Publikováno v:
Applied Physics Letters. 62:1889-1891
This article discusses scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films.