Zobrazeno 1 - 4
of 4
pro vyhledávání: '"D P Bouldin"'
Publikováno v:
IBM Journal of Research and Development. 39:465-497
Physical phenomena underlying failure due to electromigration and stress-induced voiding in fine Al and Al-alloy thin-film conducting lines are examined in the context of accelerated testing methods and structures. Aspects examined include effects du
Autor:
J. G. Ryan, D. P. Bouldin, Timothy D. Sullivan, D. C. Beyar, George J. Slusser, J. B. Riendeau, S. E. Shore
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1474-1479
Evaporated metallizations composed of aluminum alloys and titanium underlayers were patterned, passivated with plasma enhanced chemical vapor deposited SiNx and aged for 1000 h at 150 °C in order to observe stress‐induced void formation. Metal fil
Autor:
D. P. Bouldin
Publikováno v:
Journal of Electronic Materials. 10:747-795
With the increasing concern for the affects of alpha particles on the reliability of semiconductor memories, an interest has arisen in characterizing semiconductor manufacturing materials for extremely low-level alpha-emitting contaminants. It is sho