Zobrazeno 1 - 10
of 35
pro vyhledávání: '"D N Goryachev"'
Autor:
A. V. Ershov, D. N. Goryachev, E. V. Beregulin, M. A. Elistratova, Olga M. Sreseli, N. A. Bert, V. N. Nevedomskii
Publikováno v:
Semiconductors. 54:1315-1319
The properties of multilayer α-Si(Ge)/SiO2 nanostructures deposited onto p-Si substrates and annealed at various temperatures are investigated. The total nanolayer thickness is no larger than 300–350 nm. It is found that despite the formation of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2afdef1ed455094fcfcc5168125449
https://doi.org/10.1134/s1063782620100292
https://doi.org/10.1134/s1063782620100292
Publikováno v:
Semiconductors. 52:1193-1197
The temperature dependences of the current–voltage characteristics and photosensitivity of composite layers of silicon and gold nanoparticles on single-crystal silicon with p-type conductivity are investigated. The current transfer mechanisms in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef404a8f76c7ad62de42560a5114ae9
https://doi.org/10.1134/s106378261809021x
https://doi.org/10.1134/s106378261809021x
Publikováno v:
Semiconductors. 52:1051-1055
Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fc3019069d474f7d7e62ff275b8858
https://doi.org/10.1134/s1063782618080067
https://doi.org/10.1134/s1063782618080067
Publikováno v:
Semiconductors. 51:483-487
The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935215696af863d6d98b0ed835bfc4da
https://doi.org/10.1134/s1063782617040029
https://doi.org/10.1134/s1063782617040029
Publikováno v:
Semiconductors. 49:442-447
A composite system of silicon quantum dots and gold particles with properties periodically changing along the surface (i.e., a system exhibiting the properties of a diffraction grating) is obtained by a one-step metal-assisted chemical etching. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39450d144460425f1a06dae6cee21c48
https://doi.org/10.1134/s1063782615040260
https://doi.org/10.1134/s1063782615040260
Publikováno v:
Semiconductors. 44:1588-1591
Free-standing layers of porous silicon with a thickness ranging from 50 to 200 μm have been fabricated using an electrolyte composed of HF and acetic acid. Chemical aspects of the etching process associated with the evolution of gases that favor det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e342e1dd8b8f1ad43180491b2a56500a
https://doi.org/10.1134/s1063782610120092
https://doi.org/10.1134/s1063782610120092
Publikováno v:
Technical Physics Letters. 36:443-446
The design of a two-level slotted silicon-based electrode and a technology of its manufacturing by anisotropic etching of (110)-oriented Si wafers are described. The electrode contains two layers, one with wide channels and another with narrow slots.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098267809a35b6cde150e86c1b470e96
https://doi.org/10.1134/s1063785010050160
https://doi.org/10.1134/s1063785010050160
Publikováno v:
Semiconductors. 44:642-646
The intensity of photoluminescence from nanoporous silicon layers produced by electrochemical etching in an aqueous-alcoholic HF solution in the presence of iron ions increases and properties of these layers are stabilized. The optimal FeCl3 concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59795dfe93940ad1dfa2768ee86c6fc0
https://doi.org/10.1134/s1063782610050167
https://doi.org/10.1134/s1063782610050167
Publikováno v:
Semiconductors. 43:1347-1350
It is shown that nanoporous silicon electrochemically fabricated on p-type silicon (1–4 Ω cm) in complete darkness exhibits nearly no photoluminescence in the visible spectral range. Photoluminescence properties appear upon irradiation of a porous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b4201e32163336c70431eb8cc0d7b46
https://doi.org/10.1134/s1063782609100169
https://doi.org/10.1134/s1063782609100169
Publikováno v:
physica status solidi (b). 246:444-447
An interaction of molecular oxygen and p-Si nanocrystallites in HF–ethanolic solution with simultaneous illumination has been investigated. It is shown that after such treatment with white-light exposure the photoluminescence from nanocrystallites
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763d192f457746a5331602d8686e9f93
https://doi.org/10.1002/pssb.200844365
https://doi.org/10.1002/pssb.200844365