Výsledky vyhledávání - "D N, Seleznev"

Enhancement of ion beam charge states by adding a second anode to the metal-vapor vacuum-arc ion source

Autor: B. M. Johnson, V. A. Batalin, Efim Oks, S. V. Petrenko, Timur Kulevoy, D. N. Seleznev, D.A. Kashinsky, R. P. Kuibeda, Ady Hershcovitch, V. I. Pershin, V.G. Kuzmichev, A. A. Kolomiets

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 522:171-177

We report detailed investigations of ion charge state enhancement in an alternative metal-vapor-vacuum arc ion source configuration, consisting of two anodes with staggered (but partially overlapping) high current discharges in axial high magnetic fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fcef2f896edcbe2bb73652c1d634ef22
https://doi.org/10.1016/j.nima.2003.11.196

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Two approaches to electron beam enhancement of the metal vapor vacuum arc ion source

Autor: D. N. Seleznev, Timur Kulevoy, R. P. Kuibeda, Vasily Gushenets, Efim Oks, B. M. Johnson, G. Yu. Yushkov, Ady Hershcovitch, Alexey S. Bugaev, V. A. Batalin, A. A. Kolomiets, V. I. Pershin, S. V. Petrenko

Publikováno v: Laser and Particle Beams. 21:103-108

Conclusive demonstration of electron-beam enhancement of ion charge states for the Metal Vapor Vacuum Arc (MEVVA) ion source was recently achieved using an external electron beam (E-MEVVA) in experiments performed jointly among the Institute for Theo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f170657bb2319733aa9e5305d000e490
https://doi.org/10.1017/s0263034603211198

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Electron-beam enhancement of the metal vapor vacuum arc ion source

Autor: Vasily Gushenets, Timur Kulevoy, A. A. Kolomiets, Alexey S. Bugaev, V. A. Batalin, D. N. Seleznev, R. P. Kuibeda, Efim Oks, G. Yu. Yushkov, B. M. Johnson, Ady Hershcovitch, S. V. Petrenko, V. I. Pershin

Publikováno v: Journal of Applied Physics. 92:2884-2889

We report detailed investigations of the electron-beam metal vapor vacuum arc (E-MEVVA) ion source. The experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. We recently reported the first conclusive demonstration

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d2a73d187f7842d5e8e3cb39bf228d84
https://doi.org/10.1063/1.1498956

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Further development of the E-MEVVA ion source

Autor: B. M. Johnson, Timur Kulevoy, V. A. Batalin, Ady Hershcovitch, D. N. Seleznev, Efim Oks, Alexey S. Bugaev, G. Yu. Yushkov, Vasily Gushenets, A. A. Kolomiets, R. P. Kuibeda, V. I. Pershin, S. V. Petrenko

Publikováno v: Review of Scientific Instruments. 73:702-705

We report detailed investigations of the electron-beam metal vapor vacuum-arc (E-MEVVA) ion source, which were performed jointly among the Institute for Theoretical and Experimental Physics, Moscow, Russia, the High Current Electronics Institute, Tom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::411a4e9e876031a65ba446c8dc5c7f12
https://doi.org/10.1063/1.1431702

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[Untitled]

Autor: D. N. Seleznev, T. V. Kulevoi, S. V. Petrenko, V. A. Batalin, A. A. Kolomiets, V. I. Pershin, R. P. Kuibida

Publikováno v: Instruments and Experimental Techniques. 45:297-300

The Metal Vapor Vacuum Arc (MEVVA) ion source and its modifications are investigated at the Institute of Theoretical and Experimental Physics (ITEP). In a series of the experiments, the possibility of increasing the charge state of the generated uran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1c172718794dd00564408c2555bd003
https://doi.org/10.1023/a:1016054516173

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Molecular ion sources for low energy semiconductor ion implantation (invited)

Autor: A. V. Kozlov, S. N. Dugin, Efim Oks, S. Minaev, R. P. Kuibeda, Vasily Gushenets, Ady Hershcovitch, Timur Kulevoy, O. Alexeyenko, G. N. Kropachev, D. N. Seleznev, Alexey S. Bugaev, G. Yu. Yushkov, Alexey V. Vizir

Publikováno v: Review of Scientific Instruments. 87:02B702

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1bfd0a1e5efeca2248037f58fe5135
https://doi.org/10.1063/1.4931719

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Rhenium ion beam for implantation into semiconductors

Autor: S. V. Kraevsky, D. I. Smirnov, N. N. Gerasimenko, M. E. Alyoshin, Timur Kulevoy, V. V. Khoroshilov, A. A. Temirov, P. А. Fedorov, D. N. Seleznev, P. Yakushin

Publikováno v: The Review of scientific instruments. 83(2)

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ded277211ec0660b94315d1dbd2400bf
https://pubmed.ncbi.nlm.nih.gov/22380345

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