Zobrazeno 1 - 10
of 13
pro vyhledávání: '"D M Samosvat"'
Publikováno v:
JETP Letters. 112:769-773
The energy spectrum of deep impurity centers in wide-bandgap semiconductors (Eg > 2 eV) of mesoscopic sizes R ⪢ λD, where λD is the de Broglie wavelength, at which the spectrum of free (uncoupled) charge carriers is not quantized, but the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9f66e0a7c527cfeedf4b84a8fac522
https://doi.org/10.1134/s0021364020240091
https://doi.org/10.1134/s0021364020240091
Publikováno v:
Technical Physics Letters. 44:479-482
A theoretical analysis of the mechanism of generation of singlet oxygen in the presence of photoexcited nanoporous silicon is presented. It is demonstrated that the mechanism of generation of singlet oxygen is based on nonradiative energy transfer fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bfc3de22156ba14b71fa7fd8bad6b8b
https://doi.org/10.1134/s1063785018060093
https://doi.org/10.1134/s1063785018060093
Publikováno v:
Technical Physics Letters. 43:691-693
It is shown that a previously discovered effect of the introduction of Ni nanoparticles into films on the basis of poly(3-hexylthiophene) and fullerene derivatives (P3HT: [60]PCBM: Ni), which consists in increasing the light absorption and photolumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9d63f015c8c85d19a0359be9b11e2b1
https://doi.org/10.1134/s1063785017080041
https://doi.org/10.1134/s1063785017080041
Publikováno v:
Journal of Physics: Conference Series. 1461:012061
In the present work a mechanism of nonradiative radiation via deep energy levels is considered for InGaN/GaN LEDs from the first principles. The coefficient and time of such Auger recombination are evaluated numerically and are shown to be enough for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f39e561f1db0c85039c48760900db48
https://doi.org/10.1088/1742-6596/1461/1/012061
https://doi.org/10.1088/1742-6596/1461/1/012061
Publikováno v:
Journal of Experimental and Theoretical Physics. 121:76-95
A microscopic analysis of the mechanisms of nonradiative energy transfer in a system of two semiconductor QDs caused by Coulomb interaction of donor and acceptor electrons is performed. The energy transfer rate is calculated for QDs based on III–V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8397b2b5eba0cbe5408ca54ef02460
https://doi.org/10.1134/s1063776115060138
https://doi.org/10.1134/s1063776115060138
Publikováno v:
Semiconductors. 47:22-27
The nonequilibrium lifetime of charge carriers in a quantum dot has been experimentally and theoretically investigated. It has been shown that, at low temperatures when the ground state is fully occupied, the lifetime is almost independent of the exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c75d59e5bb971e7ccd2c6ec10a481d
https://doi.org/10.1134/s1063782613010193
https://doi.org/10.1134/s1063782613010193
Publikováno v:
Technical Physics Letters. 39:74-77
We consider the nonradiative resonance energy transfer between two semiconductor quantum dots (donor and acceptor), taking into account the nonparabolicity of the electron dispersion law, and the energy transfer due to the Coulomb interaction between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c41fb6f0bb113bfe87c3087a19daa891
https://doi.org/10.1134/s1063785013010240
https://doi.org/10.1134/s1063785013010240
Autor:
G. G. Zegrya, D. M. Samosvat
Publikováno v:
Journal of Experimental and Theoretical Physics. 108:907-916
The S-matrix formalism is used to perform analytical calculations of the spectrum of quasi-stationary states of charge carriers in a core-shell quantum dot. Analytical expressions are obtained for the second-order perturbative corrections to the posi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf2c2de22eb312503b5bacaf06eb9ec
https://doi.org/10.1134/s1063776109060016
https://doi.org/10.1134/s1063776109060016
Autor:
D. M. Samosvat, G. G. Zegrya
Publikováno v:
Journal of Experimental and Theoretical Physics. 104:951-965
Microscopic calculation of the probability of Auger recombination of charge carriers localized in a semiconducting quantum dot (QD) is carried out. It is shown that two mechanism of Auger recombination (nonthreshold and quasi-threshold) operate in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f88342532ed97799c9a9d23a1c36b4
https://doi.org/10.1134/s1063776107060131
https://doi.org/10.1134/s1063776107060131
Publikováno v:
Journal of Physics: Conference Series. 461:012001
In the work we examined the mechanism of nonradiactive resonant energy transfer between quantum dots (QD), the probability of this process was calculated. The valence band has difficult structure due to the additional matrix element connected with an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354e693e170400c6fbf8dcf63ae1dad1
https://doi.org/10.1088/1742-6596/461/1/012001
https://doi.org/10.1088/1742-6596/461/1/012001