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Akademický článek
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Autor:
D. M. Wong Tin Niam, Michelle Lai
Publikováno v:
Internal Medicine Journal. 42:422-427
Background: Computed tomography (CT) of the brain in delirium investigation has a low yield of identifiable causes. We sought to identify the best clinical predictors of an intracranial cause of delirium. Methods: We performed a case–control study
Publikováno v:
ResearcherID
Publikováno v:
Tissue Antigens. 20:223-226
This study reports the phenotype frequencies (PF) and gene frequencies (GF) of 72 different HLA-A, -B, -C, and -DR antigens in Indian Hindus, thus substantially extending the data previously reported for Asian Indians (Singal 1972, Bale et al. 1980,
Publikováno v:
Journal of Prosthodontics Implant, Esthetic and Reconstructive Dentistry. 11:168-175
Purpose This investigation examined the effect of 5 different cements on the retention strength of prefabricated endodontic dowels placed into root canals previously obturated with gutta percha and a zinc oxide/eugenol (ZOE) sealer. Materials and Met
Publikováno v:
International Endodontic Journal. 35:372-378
Hagge MS, Wong RDM, Lindemuth JS. Effect of three root canal sealers on the retentive strength of endodontic posts luted with a resin cement. International Endodontic Journal, 35, 372–378, 2002. Aim This investigation examined what effect three dif
Publikováno v:
Journal of Prosthodontics. 11:19-24
Purpose This investigation examined what effect cement thickness had on retention of prefabricated endodontic dowels luted with a composite resin cement (Panavia 21 OP; J Morita, Irvine, CA) into canals previously obturated with gutta percha and a eu
Autor:
C. T. Chiu, K. Y. Cheung, K. M. Lai, C. Li, D. M. Wong, Kok-Lung Chan, T. S. Lun, M. Y. Law, Wing K. Fung
Publikováno v:
International Journal of Legal Medicine. 114:281-284
The allele distributions at the 12 short tandem repeat (STR) loci D3S1358, HUMvWA, HUMFIBRA/FGA, HUMTHO1, HUMTPOX, HUMCSF1P0, D5S818, D13S317, D7S820, D8S1179, D21S11 and D18S51 have been determined for 284 unrelated Chinese in Hong Kong. The combine
Autor:
N. G. Tarr, D. M. Wong
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:783-786
A theoretical study of the scalability of the SiGe channel pmetal–oxide–semiconductor field effect transistor to the 0.1 μm generation is presented. Devices with n+ polysilicon gates, p+ polysilicon gates, and intermediate workfunction p+ SiGe g