Zobrazeno 1 - 10
of 276
pro vyhledávání: '"D M, Phase"'
Autor:
Sourav Chowdhury, Anupam Jana, Ritu Rawat, Priyanka Yadav, Rajibul Islam, Fei Xue, A. K. Mandal, Sumit Sarkar, Rajan Mishra, R. Venkatesh, D. M. Phase, R. J. Choudhary
Publikováno v:
APL Materials, Vol 12, Iss 5, Pp 051129-051129-9 (2024)
Ferromagnetic insulators (FMIs) have widespread applications in microwave devices, magnetic tunneling junctions, and dissipationless electronic and quantum-spintronic devices. However, the sparsity of the available high-temperature FMIs has led to th
Externí odkaz:
https://doaj.org/article/9a10596d43fd4b4f9088b8d9f3613f1a
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025037-025037-5 (2021)
Ferromagnetic Co-doped TiO2 thin films at room temperature have been synthesized by RF sputtering and ion-irradiated with 100 MeV Au ions. The surface roughness of the film increases with increasing Au-ion fluence. Kerr microscopy measurements at roo
Externí odkaz:
https://doaj.org/article/8e96ecdfcc76457aaf5b709d737a14d5
Autor:
Soma Banik, Pranab Kumar Das, Azzedine Bendounan, Ivana Vobornik, A. Arya, Nathan Beaulieu, Jun Fujii, A. Thamizhavel, P. U. Sastry, A. K. Sinha, D. M. Phase, S. K. Deb
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Rashba spin-orbit splitting in the magnetic materials opens up a new perspective in the field of spintronics. Here, we report a giant Rashba spin-orbit splitting on the PrGe [010] surface in the paramagnetic phase with Rashba coefficient α
Externí odkaz:
https://doaj.org/article/9dc3a471241a4d608bde4bcb43f9fb43
Autor:
J. Sahu, Sudhish Kumar, V. S. Vats, P. A. Alvi, B. Dalela, D. M. Phase, M. Gupta, Shalendra Kumar, S. Dalela
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:21546-21568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c95097c9b0ce640110064c95c0fe50b4
https://doi.org/10.1007/s10854-022-08945-9
https://doi.org/10.1007/s10854-022-08945-9
Autor:
Anupam Jana, Sophia Sahoo, Sourav Chowdhury, Arup Kumar Mandal, Santosh Bimli, Rupesh S. Devan, R. J. Choudhary, D. M. Phase, A. K. Raychaudhuri
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de6af090655c2bf719c3fa16e68d377d
https://doi.org/10.1103/physrevb.106.205123
https://doi.org/10.1103/physrevb.106.205123
Publikováno v:
Nano Letters. 21:8433-8438
BaBiO3(BBO) is known to be a valence-skipping perovskite, which avoids the metallic state through charge disproportionation (CD), the mechanism of which is still unresolved. A novel mechanism for CD is presented here in the covalent limit using a mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77fc31023539dae753742fe1664ec30a
https://doi.org/10.1021/acs.nanolett.1c03103
https://doi.org/10.1021/acs.nanolett.1c03103
Publikováno v:
Journal of Synchrotron Radiation. 28:1504-1510
A prototype in situ X-ray absorption near-edge structure (XANES) system was developed to explore its sensitivity for ultra-thin films of iron-nitride (Fe-N), cobalt-nitride (Co-N) and nickel-nitride (Ni-N). They were grown using DC-magnetron sputteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d741f0f11a3314336a3db3306007881
https://doi.org/10.1107/s1600577521006822
https://doi.org/10.1107/s1600577521006822
Autor:
Arup Kumar Mandal, Aprajita Joshi, Surajit Saha, Binoy Krishna De, Sourav Chowdhury, V. G. Sathe, U. Deshpande, D. Shukla, Amandeep Kaur, D. M. Phase, R. J. Choudhary
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64353e550e96f64412610727ea2d22f3
https://doi.org/10.1103/physrevb.106.104104
https://doi.org/10.1103/physrevb.106.104104
Publikováno v:
ACS Applied Electronic Materials. 3:3060-3071
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc644952076a1dca6ef482c06271d31a
https://doi.org/10.1021/acsaelm.1c00290
https://doi.org/10.1021/acsaelm.1c00290
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:11835-11844
The synthesis and characterization of high mobility thin films of La-doped SrSnO $$_3$$ are reported. The mobility for the $$7\%$$ La-doped sample was found to be 228 cm $$^2$$ V $$^{-1}$$ s $$^{-1}$$ . The observed high mobility was associated with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d34b3b7e66d743a61a608306ed7669f
https://doi.org/10.1007/s10854-021-05813-w
https://doi.org/10.1007/s10854-021-05813-w