Zobrazeno 1 - 10
of 46
pro vyhledávání: '"D L Hansen"'
Publikováno v:
HemaSphere, Vol 6, Pp 194-195 (2022)
Externí odkaz:
https://doaj.org/article/20cf1fe38f7144f2a37de04d73f5cb26
Publikováno v:
IEEE Transactions on Nuclear Science. 70:336-344
Publikováno v:
IEEE Transactions on Nuclear Science. 69:264-272
Autor:
D. L. Hansen
Publikováno v:
IEEE Transactions on Nuclear Science. 68:642-650
This article reports on the calculation of upset rates in low and medium earth orbits using a design-of-experiments and Monte-Carlo approach to the parameters available in the Cosmic-Ray Effects on Micro-Electronics (CREME96) code. Rate-calculation a
Autor:
D. L. Hansen
Publikováno v:
IEEE Transactions on Nuclear Science. 67:336-344
This article reports on the calculation of upset rates in geosynchronous orbit using a design of experiments (DOEs) and Monte-Carlo (MC) approach to the parameters available in CREME96. Accuracy of the approach is checked using on-orbit data from the
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
Single event effect (SEE) testing was performed on three DDR2 devices that varied in density and feature sizes. Testing was performed up to LET = 57 MeV-cm2/mg. The parts were characterized for a variety of SEE, including multi-bit upsets (MBU) and s
Autor:
D. L. Hansen
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2874-2880
This paper reports on the calculation of proton SEU cross section from heavy-ion data using a number of different models. Model accuracy is checked using data on proton and heavy-ion cross sections from the published literature. The closed-form model
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
We present the results of single-event effects (SEE) and total ionizing-dose (TID) testing performed on the die used in DDC's 56F64008 flash-NOR devices. The device was single event latchup (SEL) immune at LET=85 MeV cm2/mg. All single event function
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash d
Autor:
D. L. Hansen
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
This paper reports on the calculation of proton SEU cross section from heavy-ion data in GaAs devices. A number of different models are used, however in each, accommodations must be made to account for the fact that the density and ionization energy