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Akademický článek

Photo induced self-diffusion and viscosity in amorphous chalcogenide films

Autor: Yu Kaganovskii, D L Beke, V Freilikher, S Kökényesi, A M Korsunsky

Publikováno v: Materials Research Express, Vol 7, Iss 1, p 016204 (2020)

Acceleration of the mass transport in amorphous chalcogenide films under band gap light illumination is usually attributed to the decrease of the film viscosity. However, our direct measurements of the film viscosity at various temperatures and light

Externí odkaz: https://doaj.org/article/55df448f9c5e40edb04b67306bdbad3a

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Identification of a disordered magnetic phase in pure nanocrystalline iron

Autor: P. F. De Châtel, S. Szabó, D. L. Beke

Publikováno v: Philosophical Magazine B. 81:1597-1602

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3f4de1ffa1266d91b9bfba9aee7722d
https://doi.org/10.1080/13642810110043268

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On the range of validity of the continuum approach for nonlinear diffusional mixing of multilayers

Autor: Z. ERDELYI, D. L. BEKE, P. NEMES, G. A

Publikováno v: Philosophical Magazine A. 79:1757-1768

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b29a277d7ba5aa294996f61a93c2d02
https://doi.org/10.1080/014186199251689

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Evolution of the structure and hydrogen configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

Autor: C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e

Publikováno v: Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III), pp. 29–30, Firenze, 14-18 May 2012
info:cnr-pdr/source/autori:C. Frigeri a, M. Serényi b, A. Csik c, N. Q. Khánh b, L. Nasi a, Z. Erdélyi d, D. L. Beke d, H.-G. Boyen e/congresso_nome:Progress in Applied Surface, Interface, and Thin Film Science-Solar Renewable Energy News III (SURFINT-SREN III)/congresso_luogo:Firenze/congresso_data:14-18 May 2012/anno:2012/pagina_da:29/pagina_a:30/intervallo_pagine:29–30

Hydrogen is the element of choice to passivate dangling bonds in amorphous and crystalline semiconductors, like Si, Ge and SiGe because of its single-electron atomic structure. By hydrogenation better electro-optical characteristics are obtained. Hyd

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::81854170aec3df3cbe6cb1bb8de74d24
http://www.cnr.it/prodotto/i/198198

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Is there a Connection between the Temperature Function of BΩ and the curvature of in D versus 1/T for the Self-Diffusion in B. C. C. Metals?

Autor: D. L. Beke, G. Neumann

Publikováno v: physica status solidi (b). 161:K5-K10

Mise en evidence de l'inexistence de relation entre la fonction de la temperature BΩ et la courbe de la representation d'Arrhenius de D (coefficient d'autodiffusion). 1) Pour V, la fonction BΩ exhibe deux branches lineaires similaires a celles de l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e56ad9e2cfefe419c7b3fb6515cd350
https://doi.org/10.1002/pssb.2221610146

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