Zobrazeno 1 - 10
of 46
pro vyhledávání: '"D L, Dheeraj"'
Autor:
Junxi Wang, Xiaoyan Yi, Helge Weman, Jinmin Li, Zhiqiang Liu, Yang Li, D L Dheeraj, Yunyu Wang, Meng Liang
Publikováno v:
Crystal Growth & Design. 19:5516-5522
III-Nitride epitaxy is deeply dependent on the substrate and is difficult to grow on amorphous substrates because of the lattice mismatch limits. In this paper, graphene is employed as a buffer lay...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93287229349236a5fb54463684be4ec
https://doi.org/10.1021/acs.cgd.9b00093
https://doi.org/10.1021/acs.cgd.9b00093
Autor:
Bjørn-Ove Fimland, Dong Chul Kim, A. Mazid Munshi, Jungtae Nam, Dong Hoon Shin, Keun Soo Kim, Sangwook Lee, Anjan Mukherjee, D L Dheeraj, Hoyeol Yun, Helge Weman
Publikováno v:
ACS Applied Materials & Interfaces. 11:13514-13522
We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an embedded nanowire structure in a planar junction configuration. A thorough study of electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e522acfe48f67f72e50be8f6a518605
https://doi.org/10.1021/acsami.8b20581
https://doi.org/10.1021/acsami.8b20581
Autor:
Bjørn-Ove Fimland, A. Mazid Munshi, Dingding Ren, Julie S. Nilsen, Helge Weman, J F Reinertsen, Antonius T. J. van Helvoort, Anders Gustafsson, D L Dheeraj, Chengjun Jin, Junghwan Huh
Publikováno v:
Nano Letters. 16:1201-1209
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the effects of the incorporation of Vy element results in lack of control on the growth of ternar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ad59236bd0c117b8e06060a5014cc54
https://doi.org/10.1021/acs.nanolett.5b04503
https://doi.org/10.1021/acs.nanolett.5b04503
Autor:
D L Dheeraj, A. M. Munshi, Bjørn-Ove Fimland, M.B. Erlbeck, Helge Weman, A. T. J. van Helvoort, Junghwan Huh, Vidar Tonaas Fauske, Dong Chul Kim
Publikováno v:
Journal of Microscopy. 262:183-188
For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a comparison of various in situ methods for electronically probing single, p-doped GaAs nanowires inside a sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2694de5fababfd9c68a2762eea0cea9
https://doi.org/10.1111/jmi.12328
https://doi.org/10.1111/jmi.12328
Autor:
A. Mazid Munshi, Dong Chul Kim, Antonius T. J. van Helvoort, Junghwan Huh, Sangwook Lee, Hanne Kauko, Helge Weman, Hoyeol Yun, D L Dheeraj, Bjørn-Ove Fimland
Publikováno v:
Nano Letters. 15:3709-3715
Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b0dbcd5a72f5e4a35e86d7f6429deeb
https://doi.org/10.1021/acs.nanolett.5b00089
https://doi.org/10.1021/acs.nanolett.5b00089
Autor:
A. T. J. van Helvoort, Dong Chul Kim, Heike Riel, A. M. Munshi, D L Dheeraj, O.M. Christoffersen, G. Signorello, Bjørn-Ove Fimland, Helge Weman
Publikováno v:
Journal of Crystal Growth. 378:532-536
We report on the growth, structural and electrical characterizations of Be-doped GaAs nanowires (NWs) grown by the Au- and Ga-assisted vapour–liquid–solid techniques using molecular beam epitaxy. The growth rate of Be-doped GaAs NWs grown by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb07f883e771aadb031d25cbdb5c88d
https://doi.org/10.1016/j.jcrysgro.2012.12.130
https://doi.org/10.1016/j.jcrysgro.2012.12.130
Autor:
Bjørn-Ove Fimland, Antonius T. J. van Helvoort, J Todorovic, Helge Weman, D L Dheeraj, Abdul Mazid Munshi
Publikováno v:
Journal of Crystal Growth. 372:163-169
Accomplishing control of the crystal phases in III–V semiconductor nanowires (NWs) is important for applications in future advanced nano-devices. In this work, we report on the growth of both zinc blende (ZB) and wurtzite (WZ) GaAs in self-catalyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31ff4aa324c708ecde893d50f22f235
https://doi.org/10.1016/j.jcrysgro.2013.03.004
https://doi.org/10.1016/j.jcrysgro.2013.03.004
Autor:
Bjørn-Ove Fimland, A. Mazid Munshi, Giorgio Divitini, Caterina Ducati, Antonius T. J. van Helvoort, Vidar Tonaas Fauske, Helge Weman, Junghwan Huh, D L Dheeraj
Publikováno v:
Nano letters. 16(5)
Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a method to achieve well-defined junctions within nanowires. To better understand the mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38d7263ed4a855fd11c18c3713604926
https://pubmed.ncbi.nlm.nih.gov/27104293
https://pubmed.ncbi.nlm.nih.gov/27104293
Publikováno v:
Journal of Crystal Growth. 312:2073-2077
GaAs nanowires (NWs) are grown on GaAs (1 1 1) B substrates in a molecular beam epitaxy system, by Au-assisted vapor–liquid–solid growth. We compare the characteristics of NWs elaborated with As 2 or As 4 molecules. In a wide range of growth temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad15122a3b33459f2c046ad2d3c63743
https://doi.org/10.1016/j.jcrysgro.2010.04.027
https://doi.org/10.1016/j.jcrysgro.2010.04.027
Autor:
Bjørn-Ove Fimland, Helge Weman, Jean-Christophe Harmand, Hailong Zhou, Gilles Patriarche, D L Dheeraj
Publikováno v:
Journal of Crystal Growth. 311:1847-1850
GaAs nanowire (NW) heterostructures with four GaAsSb inserts were grown on GaAs(1 1 1)B substrates by Au-assisted molecular beam epitaxy (MBE). Structural characterization of the NWs showed that the transition between the GaAs and GaAsSb heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4a9d8e57684e4dd1b7bfa22c803378b
https://doi.org/10.1016/j.jcrysgro.2008.11.090
https://doi.org/10.1016/j.jcrysgro.2008.11.090