Zobrazeno 1 - 10
of 10
pro vyhledávání: '"D K, de Vries"'
Autor:
C M A, van Alem, J R, Bank, D K, de Vries, I M, Bajema, M J K, Mallat, J W, de Fijter, J I, Rotmans, C, van Kooten
Publikováno v:
Transplant immunology. 75
Acute cellular rejection (ACR) occurs in 10% of renal allograft recipients and is characterized by leukocyte infiltration as observed in needle biopsies. ACR onset is subject to several risk factors, including delayed graft function (DGF). As the imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3956db593dcdc22b918fa8732104069a
https://pubmed.ncbi.nlm.nih.gov/36108808
https://pubmed.ncbi.nlm.nih.gov/36108808
Publikováno v:
International Symposium on Microelectronics. 2015:000479-000485
This paper evaluates various optical metrology techniques for in-line control of the uniformity of 3D stacked structures. Advanced packaging technologies are rapidly evolving and 3D architectures require very well controlled process steps. Optical me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff9c2e8b2a9dc9a836ba69bb257a1552
https://doi.org/10.4071/isom-2015-wp53
https://doi.org/10.4071/isom-2015-wp53
Publikováno v:
Journal of Applied Physics. 79:8087-8090
The intrinsic and extrinsic capacitances of in‐plane‐gated (IPG) transistors are calculated by conformal mapping. The capacitance per unit length between coplanar areas is only weakly dependent on the separation. It is essentially determined by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42e877021099eab759ab80ffc994051
https://doi.org/10.1063/1.362364
https://doi.org/10.1063/1.362364
Publikováno v:
Solid-State Electronics. 40:637-640
We investigate how pseudomorphic structures can be rendered insulating by Ga + focused ion beam implantation. Implantation in GaAs/(In,Ga)As/(Al,Ga)As structures leads to effective depletion of the electron gas. The dependence of breakdown voltage on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dea97ee69693ee45a0e6ba061aae33b
https://doi.org/10.1016/0038-1101(95)00378-9
https://doi.org/10.1016/0038-1101(95)00378-9
Autor:
Andreas D. Wieck, D. K. de Vries
Publikováno v:
American Journal of Physics. 63:1074-1078
The van der Pauw technique for resistivity and Hall measurements is illustrated on large‐scale models of conductive polyethylene, which can be used to visualize the potential distribution in arbitrarily shaped two‐dimensional samples. The equipot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0a4814152609c442644ec766cfa477
https://doi.org/10.1119/1.18013
https://doi.org/10.1119/1.18013
Publikováno v:
Journal of Applied Physics. 77:6710-6714
We observe electrically asymmetrical source‐drain characteristics in in‐plane‐gated transistors with shaped channels, and investigate them for different geometries. We give a qualitative explanation of the asymmetry, which is supported by volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531d40925f25d5db1f417ea68fd28509
https://doi.org/10.1063/1.359085
https://doi.org/10.1063/1.359085
Autor:
Andreas D. Wieck, M. Holzmann, Gerhard Abstreiter, Friedrich Schäffler, D. K. de Vries, D. Többen
Publikováno v:
Applied Physics Letters. 67:1579-1581
One‐dimensional in‐plane‐gate (IPG) transistors in the Si/Ge system are fabricated and characterized by focused ion implantation of Ga+ ions on lines into high‐mobility two‐dimensional electron gases confined in Si/SiGe heterostructures. Tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78290e1b2dc59fb789ae9e75df122f8f
https://doi.org/10.1063/1.114945
https://doi.org/10.1063/1.114945
Publikováno v:
Solid-State Electronics. 37:701-703
In-plane-gated quantum point contacts were fabricated in a pseudomorphic GaAs/InGaAs/AlGaAs heterostructure by focused ion beam implantation of 100 keV Ga + ions. We see an intricate conductance quantization structure at 4.2 K. As the temperature is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d12a2dd2758556b8847de4384a65424
https://doi.org/10.1016/0038-1101(94)90280-1
https://doi.org/10.1016/0038-1101(94)90280-1
Autor:
Andreas D. Wieck, D. K. de Vries
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:394
By using large‐scale models made of conductive polyethylene, the series resistance of constrictions in a two‐dimensional electron gas can be estimated without any computational effort.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef749e42b049ab7804af5194fecb11a1
https://doi.org/10.1116/1.587953
https://doi.org/10.1116/1.587953
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:14
A method is presented to discretize almost arbitrary curves and areas on nonrectangular grids. This method can be applied in focused ion and electron beam systems. Distortion of the physical writing grid can be taken into account at the discretizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ed291f9057c8bb822df3f8d6d62dc82
https://doi.org/10.1116/1.587173
https://doi.org/10.1116/1.587173