Zobrazeno 1 - 10
of 240
pro vyhledávání: '"D J Stirland"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9d4b35eccba59108f9271af1c2126c0
https://doi.org/10.1201/9781003069621-44
https://doi.org/10.1201/9781003069621-44
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4b2d5a6eec0e387d3ebfe1a18463b8f
https://doi.org/10.1201/9781003069621-43
https://doi.org/10.1201/9781003069621-43
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0770a789161a6ed5e5f8e90b970cbbb
https://doi.org/10.1201/9781003069614-43
https://doi.org/10.1201/9781003069614-43
A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique
Publikováno v:
Semiconductor Science and Technology. 7:A269-A274
The authors have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method. They have employed A/B etching, EL2 mapping and near-bandgap absorption (reverse contrast, RC) mapping to reveal dislocati
Publikováno v:
Semiconductor Science and Technology. 7:A233-A236
Positron lifetime results in semi-insulating and p-type materials after various heat treatments are presented. In as-grown and subsequently annealed (at 950 degrees C) materials a long-lived component of approximately 300 ps of substantial intensity
Publikováno v:
Applied Surface Science. 50:475-479
We have investigated the microstructure that occurs both inside and closely associated with dislocation cells in undoped, semi-insulating LEC GaAs. Using A/B etching, we have identified regions containing large volumes of this microstructure for exam
Autor:
D. J. Stirland, P. Kightley, R.J.M. Griffiths, R. R. Bradley, R. I. Taylor, T.B. Joyce, P.D. Hodson, J. A. Beswick
Publikováno v:
Vacuum. 40:339-346
In this paper we present the results of a study of the approaches we have adopted to limit defect propagation in GaAs on silicon. These include use of SLS, thermal annealing, and restricted area growth. We have demonstrated that bands of GalnAs/GaAs
Publikováno v:
Applied Physics Letters. 59:2585-2587
Defect selective A/B chemical etching, low‐temperature scanning cathodoluminescence, and transmission electron microscopy have been used to study the microstructure of undoped, semi‐insulating liquid‐encapsulated Czochralski GaAs wafers. It is
Autor:
P. D. Augustus, D. J. Stirland
Publikováno v:
Journal of The Electrochemical Society. 129:614-621
Publikováno v:
Journal of Microscopy. 118:343-349
SUMMARY Si-doped GaAs slices after Zn diffusion exhibited a marked decrease in luminous efficiency and a large increase in p-n junction depth when the initial carrier concentration due to the Si was > 3·5 times 1024 m−3. SEM studies using the CL a