Zobrazeno 1 - 10
of 15
pro vyhledávání: '"D J Sandiford"'
Autor:
P R Bissell, D J Sandiford
Publikováno v:
Journal of Physics F: Metal Physics. 10:1825-1840
The AC response of a type II superconducting Pb-8.4 at.%Na single-crystal cylindrical rod with a (111) orientation in the mixed state is described and analysed when the specimen is in the surface pinning regime. The results show that flux entry is no
Publikováno v:
Le Journal de Physique Colloques. 39:C6-35
Publikováno v:
Journal of Low Temperature Physics. 51:227-248
We have studied nonlinear dissipation in oscillatory flow of3He-A through 49-µm- and 17-µm-wide channels by means of torsion pendulum experiments at about 50 Hz. The observed effects are strongly history dependent; the dissipation at a given measur
Publikováno v:
Physical Review Letters. 40:565-568
The normal-fluid viscosity of liquid $^{3}\mathrm{He}$-$B$ has been determined in the neighborhood of the superfluid transition using the torsional-oscillator technique of Andronikashvili. In the pressure range from 11.90 to 19.64 bars and for reduce
Autor:
P R Bissell, D J Sandiford
Publikováno v:
Journal of Physics F: Metal Physics. 8:2173-2182
The response to an AC magnetic field of a type II superconducting single-crystal Pb-Na cylindrical rod has been observed as a function of longitudinal DC fields. The results show two different regimes of flux pinning within the specimen. At low field
Publikováno v:
Journal of Physics C: Solid State Physics. 9:L397-L402
The authors have used a torsion pendulum to measure the superfluid density and viscosity of liquid 3He at pressures of 18.2, 26.0 and 29.7 bar. It was found that rho s in the A-phase is not reproducible; the range of variation is about a factor of tw
Autor:
D J Sandiford
Publikováno v:
Proceedings of the Physical Society. 71:1002-1006
Measurements of carrier lifetime have been made on both n- and p-type silicon crystals over the temperature range 0°C to 200°C. Results are given for both high and low values of injected carrier concentrations. A comparison is made with the Shockle
Autor:
F W G Rose, D J Sandiford
Publikováno v:
Proceedings of the Physical Society. Section B. 68:894-897
The recombination and generation processes for electrons and holes in an n-type semiconductor with acceptor traps are described when the concentrations of electrons and holes are much smaller than 1019 cm-3 at room temperature. With this assumption B
Autor:
Henry A. Fairbank, D. J. Sandiford
Publikováno v:
Physical Review. 162:192-198
Autor:
D. J. Sandiford
Publikováno v:
Journal of Applied Physics. 30:1981-1986
A set of small‐area, alloy, p‐n junction diodes was made from a slice of heat‐treated n‐type silicon. The carrier lifetimes of the diodes were found to be in the range of 2.5×10−8 sec to 3.5×10−6 sec. Measurements were made of the lifet