Zobrazeno 1 - 10 of 81 pro vyhledávání: '"D J Norris"'
1
Stranski–Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory
Autor: Thomas Walther, D. J. Norris
Publikováno v: Materials Science and Technology. 34:1539-1548
We performed transmission electron microscopy of SiGe/Si(001) and Ge/Si(001) samples that undergo the Stranski–Krastanov transition from flat layer to island growth. With the help of quantitative X-ray maps of those layers, we have determined the t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da98259d5b0c59e9916dcd6accf61d48
https://doi.org/10.1080/02670836.2018.1455013
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2
Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers
Autor: David R. Leadley, D. J. Norris, Thomas Walther, Maksym Myronov
Publikováno v: Journal of Microscopy. 268:288-297
We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::901ace399321f9993c160b98d1dbdf28
https://doi.org/10.1111/jmi.12654
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5
Advanced TEM analysis of strain-balanced Si/SiGe resonant tunnelling diode structures
Autor: Douglas J. Paul, D. J. Norris, A C K Chang, A. G. Cullis
Publikováno v: Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
We present a TEM analysis of a series of Si/SiGe resonant tunnelling diode structures which contain Si1-xGex quantum wells (x of 0.4 and 1.0) grown on a range of (001) Si1-yGey virtual substrates (y of 0.15, 0.2 and 0.3). It is found that the disloca
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5bbbf97c387a383b9c29380d5c1f5d9
https://doi.org/10.1201/9781351074636-38
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7
3D determination of a MOSFET gate morphology by FIB tomography
Autor: Sarah H. Olsen, D. J. Norris, Günter Möbus, Anthony O'Neill, Beverley J. Inkson
Publikováno v: Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
The construction of today's extremely complex modem electronic devices involves a large number of sequential processing steps, many of which require sub-micron spatial accuracy. A misalignment or error in a processing step resulting in significantly
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5a564758abec5929f3b22b78ce54d201
https://doi.org/10.1201/9781351074636-138
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10
Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers
Autor: D J, Norris, M, Myronov, D R, Leadley, T, Walther
Publikováno v: Journal of microscopy. 268(3)
We compare transmission electron microscopical analyses of the onset of islanding in the germanium-on-silicon (Ge/Si) system for three different Si substrate orientations: (001), (11¯0) and (11¯1)Si. The Ge was deposited by reduced pressure chemica
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::28c1dde5b52d68410be857658ba96715
https://pubmed.ncbi.nlm.nih.gov/28972660
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