Zobrazeno 1 - 10
of 142
pro vyhledávání: '"D J, Robbins"'
Autor:
A. Rohit, K. A. Williams, X. J. M. Leijtens, T. de Vries, Y. S. Oei, M. J. R. Heck, L. M. Augustin, R. Notzel, D. J. Robbins, M. K. Smit
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 1, Pp 29-35 (2010)
A compact scalable reconfigurable multiwavelength router is proposed and demonstrated using an electronically gated cyclic router. Simultaneous wavelength-multiplexed channel allocation is performed with power penalties of 0.2-0.8 dB. Nanosecond time
Externí odkaz:
https://doaj.org/article/8026d30e1c164ba6a106e12f983e3793
Autor:
S L Liew, D J Norris, A G Cullis, R W Kelsall, P Harrison, Z Ikonic, D J Paul, S A Lynch, R Bates, D D Arnone, D J Robbins
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373ae8a60e1caef90369cacf49728e17
https://doi.org/10.1201/9781351074636-36
https://doi.org/10.1201/9781351074636-36
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Microscopy of Semiconducting Materials 2003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6afa16d53069591a7d50e32277e8818
https://doi.org/10.1201/9781351074636-35
https://doi.org/10.1201/9781351074636-35
Autor:
Richard A. Soref, Stephen Anthony Lynch, C. R. Pidgeon, D. J. Robbins, Douglas J. Paul, R. Bates, Z. Ikonic, S. L. Liew, Robert W. Kelsall, D. J. Norris, Paul Harrison, P. Murzyn, D. D. Arnone, A. G. Cullis
Publikováno v:
Heriot-Watt University
Asymmetric rolling, in which the circumferential velocities of the upper and lower rolls are different, can give rise to intense plastic shear strains and in turn shear deformation textures through the sheet thickness. The ideal shear deformation tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e478a9709f4285243dfc4845b870f6ac
https://doi.org/10.4028/www.scientific.net/msf.453-454.1
https://doi.org/10.4028/www.scientific.net/msf.453-454.1
Autor:
K.S.K. Kwa, D. J. Robbins, L.S. Driscoll, Sarah H. Olsen, D. J. Norris, Jing Zhang, A. G. Cullis, Anthony O'Neill, Sanatan Chattopadhyay
Publikováno v:
Semiconductor Science and Technology. 19:707-714
The enhanced electrical performance of dual quantum well strained Si/SiGe n-channel MOSFETs has been investigated as a function of SiGe material quality. The higher electron mobility in strained Si compared with bulk Si has been translated into perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e0e485bf6be65cf235b21bdeab478e
https://doi.org/10.1088/0268-1242/19/6/008
https://doi.org/10.1088/0268-1242/19/6/008
Autor:
D. J. Robbins, K.S.K. Kwa, L.S. Driscoll, V. Higgs, Jing Zhang, Sanatan Chattopadhyay, Sarah H. Olsen, Anthony O'Neill
Publikováno v:
Journal of Applied Physics. 94:6855-6863
Strained Si/SiGe n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been fabricated using a dual quantum well structure. The heterostructure is designed for maximum performance from both n- and p-channel devices using a singl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d9d45c720e950fcba8b73c25a0fcc4e
https://doi.org/10.1063/1.1619197
https://doi.org/10.1063/1.1619197
Publikováno v:
Journal of Applied Physics. 93:3893-3899
SiGe/Si multiple quantum wells, nominally 4 nm thick, were grown by low pressure chemical vapor deposition and the Ge distribution within the wells was studied using a variety of transmission electron microscope-based techniques. Energy-dispersive x-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e180df9507f96b2747ef3abb3db22ac7
https://doi.org/10.1063/1.1558993
https://doi.org/10.1063/1.1558993
Publikováno v:
physica status solidi (b). 235:542-546
We have analysed experimentally the temperature and pressure dependence of 980 nm high-power GaAs/AlGaAs/InGaAs semiconductor lasers in the temperature (T) range 80-350 K. Measurements of the threshold current and spontaneous emission allow us to stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac43d607cb7a6db1614c8e08dd3db53f
https://doi.org/10.1002/pssb.200301622
https://doi.org/10.1002/pssb.200301622
Publikováno v:
IEE Proceedings - Optoelectronics. 147:83-88
Asymmetric double quantum well structures with applied transverse electric field are of interest in optical modulator applications. A theoretical model of their optical properties is described. The bandstructure of the heterostructure is calculated u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463e674101beeead574a8d4a7245a887
https://doi.org/10.1049/ip-opt:20000288
https://doi.org/10.1049/ip-opt:20000288
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:2075-2084
We show that microstructures built from nonmagnetic conducting sheets exhibit an effective magnetic permeability /spl mu//sub eff/, which can be tuned to values not accessible in naturally occurring materials, including large imaginary components of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d69d22433ccf7d5634dcc53a9bc31558
https://doi.org/10.1109/22.798002
https://doi.org/10.1109/22.798002