Zobrazeno 1 - 10
of 142
pro vyhledávání: '"D Edwall"'
Autor:
B. Shojaei, S. Wang, J. Gruenewald, J. Ellsworth, D. Edwall, M. Daraselia, M. Dreiske, M. Edirisooriya, A. Yulius, M. Carmody
Publikováno v:
Journal of Electronic Materials. 51:4714-4720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba56eff133ea93a8b966ff7e6148ba4b
https://doi.org/10.1007/s11664-022-09802-5
https://doi.org/10.1007/s11664-022-09802-5
Autor:
Majid Zandian, F. Erdem Arkun, Jon Ellsworth, Sheri Douglas, Dennis D. Edwall, Michael Carmody
Publikováno v:
Journal of Electronic Materials. 46:5374-5378
Recent advances in growth of Hg1−xCdxTe films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1−xCdxTe with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6598262d12bac890240bdc36cebd0af
https://doi.org/10.1007/s11664-017-5441-9
https://doi.org/10.1007/s11664-017-5441-9
Akademický článek
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Autor:
S. Bhargava, M. Zandian, P. Dreiske, A. Yulius, Daeyeon Lee, A. C. Chen, M. Carmody, W. E. Tennant, D. D. Edwall, E. Piquette
Publikováno v:
Journal of Electronic Materials. 45:4587-4595
We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b31bfc1767228c0405ba85bcfbf2e0b0
https://doi.org/10.1007/s11664-016-4566-6
https://doi.org/10.1007/s11664-016-4566-6
Autor:
Daeyeon Lee, D. D. Edwall, M. Carmody, J. K. Markunas, J. M. Arias, D. Benson, R. N. Jacobs, Andrew J. Stoltz, A. Almeida, E. Piquette, A. Yulius
Publikováno v:
Journal of Electronic Materials. 41:2719-2724
Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cd1d993e343a5462a47719a593ef0f
https://doi.org/10.1007/s11664-012-2129-z
https://doi.org/10.1007/s11664-012-2129-z
Autor:
J. M. Arias, Jacob B. Khurgin, Curtis Billman, R. DeWames, Patrick Maloney, Daeyeon Lee, D. D. Edwall, Joseph G. Pellegrino
Publikováno v:
Journal of Electronic Materials. 41:2785-2789
This paper correlates measurements of minority carrier lifetime using photoconductivity transient or photoconductive decay (PCD) with measurements and analysis of current–voltage (I–V) on P + n photodiodes of the same layer. This analysis is done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd6e33ea0dbe52c6151b2d86ce33858
https://doi.org/10.1007/s11664-012-2062-1
https://doi.org/10.1007/s11664-012-2062-1
Autor:
Whitney Mason, Yuanping Chen, S. Freeman, R. N. Jacobs, D. D. Edwall, Jose M. Arias, E. Piquette, M. Kangas, Andrew J. Stoltz, J. G. Pasko, M. Carmody, Nibir K. Dhar
Publikováno v:
Journal of Electronic Materials. 37:1184-1188
The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2864a263046990846dcb0b8090757d
https://doi.org/10.1007/s11664-008-0434-3
https://doi.org/10.1007/s11664-008-0434-3
Autor:
Yuanping Chen, Nibir K. Dhar, M. Carmody, D. D. Edwall, L. A. Almeida, Jose M. Arias, John H. Dinan, R. N. Jacobs, M. Groenert, Jon Ellsworth, G. Brill
Publikováno v:
Journal of Electronic Materials. 36:1098-1105
It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μ e) and minority carrier lifetime (τ), are qualitatively comparable to those rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ace087f446a57d3d2f94b945d660d0
https://doi.org/10.1007/s11664-007-0182-9
https://doi.org/10.1007/s11664-007-0182-9
Autor:
William W. Bewley, William E. Tennant, D. D. Edwall, M. L. Thomas, James R. Lindle, E. Piquette, Igor Vurgaftman, Jerry R. Meyer
Publikováno v:
Journal of Electronic Materials. 36:988-992
We used an InSb radiometric thermal imager to characterize the performance of 1″ × 1″ negative luminescent (NL) arrays. The devices grown on both CdZnTe (two arrays) and silicon (three arrays) as substrates have cut-off wavelengths ranging from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc2f7ad8535bdb0cb1a767ab441e280
https://doi.org/10.1007/s11664-007-0152-2
https://doi.org/10.1007/s11664-007-0152-2
Autor:
U. Lee, M. Martinka, J. D. Benson, M. Carmody, L. A. Almeida, R. N. Jacobs, J. K. Markunas, D. D. Edwall
Publikováno v:
Journal of Electronic Materials. 36:949-957
The as-grown molecular beam epitaxy (MBE) (211)B HgCdTe surface has variable surface topography, which is primarily dependent on substrate temperature and substrate/epilayer mismatch. Nano-ripple formation and cross-hatch patterning are the predomina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0343b3468009bcd07eb32bb305f040b
https://doi.org/10.1007/s11664-007-0143-3
https://doi.org/10.1007/s11664-007-0143-3