Výsledky vyhledávání - "D E Nikolitchev"

Effect of annealing on carrier transport properties of GaN-incorporated silicon

Autor: David Tetelbaum, Mahesh Kumar, Saravanan Rajamani, Alexey Belov, Alexey Mikhaylov, Dmitry Korolev, E. V. Okulich, D. E. Nikolitchev, S. I. Surodin

Publikováno v: RSC Advances. 6:74691-74695

GaN nanocrystals were formed in a silicon matrix by sequential implantation of Ga+ and N2+ ions followed by either Furnace Annealing (FA) or Rapid Thermal Annealing (RTA). The formation of Ga-rich clusters and Ga–N bonds was confirmed by X-ray phot

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6e1ac5f8be55a0ebaed3376dee447b6
https://doi.org/10.1039/c6ra11261g

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Local compositional analysis of self-assembled GeSi/Si nanoclusters by scanning auger microscopy with nanometre lateral resolution

Autor: G A Maximov, D E Nikolitchev, D O Filatov

Publikováno v: Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::714f84d72ce0bfd11d59cd6575cec16e
https://doi.org/10.1201/9781351074636-58

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Synthesis of grafted functional polymer coatings on the aluminum surface by the methods of controlled radical polymerization

Autor: Ivan A. Novakov, Alexander Navrotskiy, V. V. Klimov, S. D. Zaytsev, D. E. Nikolitchev, E. V. Bryuzgin

Publikováno v: Russian Chemical Bulletin. 63:1610-1614

Approaches to the synthesis of grafted polymer coatings based on methacrylic monomers on the aluminum surface using atom transfer radical polymerization (ATRP) and reversible addition—fragmentation chain transfer (RAFT) were proposed. Poly(glycidyl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a1de6cfd1676fc56faedcdcd25b66dec
https://doi.org/10.1007/s11172-014-0642-3

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Influence of ion irradiation on the morphology, structure, and optical properties of gold nanoparticles synthesized in SiO2 and Al2O3 dielectric matrices

Autor: D. A. Pavlov, A. I. Bobrov, A. B. Kostyuk, Davud V. Guseinov, A. V. Boryakov, D. E. Nikolitchev, M. P. Fedonin, David Tetelbaum, Alexey Mikhaylov, Alexey Belov, D. S. Korolev

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:681-687

Irradiation of fused quartz (SiO2) and sapphire (Al2O3) by Ne+ and F+ ions with medium energies and their subsequent annealing enables us to control the intensity and frequency of surface plasmon resonance in Au nanoparticles (NPs) synthesized in oxi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2659aaf44f276b93a85a7346c106adcb
https://doi.org/10.1134/s1027451012080162

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Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

Autor: A. V. Boryakov, A. V. Ershov, Alexey Mikhaylov, D. E. Nikolitchev, Alexey Belov, David Tetelbaum

Publikováno v: Physics of the Solid State. 54:394-403

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiOx (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc1a92c1e5f0ef5c0c1b76b896940920
https://doi.org/10.1134/s1063783412020102

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Formation and 'white' photoluminescence of nanoclusters in SiO x films implanted with carbon ions

Autor: A. V. Boryakov, A. P. Gratchev, A. V. Ershov, Alexey Belov, Alexey Mikhaylov, A. P. Sidorin, David Tetelbaum, D. E. Nikolitchev

Publikováno v: Semiconductors. 44:1450-1456

Experimental data on ion synthesis of nanocomposite layers with carbon-rich clusters and silicon nanocrystals by irradiation of nonstoichiometric silicon oxide (SiO x ) films with carbon ions followed by high-temperature annealing are reported. It is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30ba039af839dae0d03ffdfa9e8393c9
https://doi.org/10.1134/s106378261011014x

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Nanosize layers of silicon and manganese ferromagnetic alloys deposited from laser plasma

Autor: E. S. Demidov, S. N. Gusev, V. G. Beshenkov, M. V. Sapozhnikov, S. Yu. Zubkov, D. E. Nikolitchev, V. P. Lesnikov, S. A. Levchuk, V. V. Podol’ski

Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:366-373

The results of studying random silicon-manganese alloys with Mn concentration increased up to 50 at % and discrete alloys (multilayer structures with silicon and manganese layers 5–20 and 1–5 nm thick, respectively) deposited from laser plasma ar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4959c7ee7f37cd6bf48a92eaff66f113
https://doi.org/10.1134/s102745101003002x

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Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

Autor: David Tetelbaum, S. I. Surodin, D. E. Nikolitchev, D. S. Korolev, R. N. Kryukov, Alexey Mikhaylov, Alexey Belov

Publikováno v: AIP Conference Proceedings.

The concentration profiles of species in silicon subjected to gallium and nitrogen co-implantation and subsequent annealing have been investigated by the method of X-ray photoelectron spectroscopy combined with the layer-by-layer ion etching of the i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32533db8d4acd60264562afeec5ea358
https://doi.org/10.1063/1.4954368

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Composition and luminescence of Si and SiO_{2 layers co-implanted with Ga and N ions}

Autor: David Tetelbaum, V. K. Vasiliev, Mahesh Kumar, Alexey Belov, D. S. Korolev, D. E. Nikolitchev, Alexey Mikhaylov, A. A. Konakov, S. I. Surodin

Publikováno v: International Journal of Nanotechnology. 14:637

With the aim to establish the possibility of synthesis of GaN inclusions by co-implantation of Ga and N ions in silicon and SiO2 films on a silicon substrate, the chemical composition and photoluminescence of implanted layers have been investigated.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0b3390e563a46acfc38032a0281a5c4d
https://doi.org/10.1504/ijnt.2017.083438

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