Výsledky vyhledávání

Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method

Autor: Chuan-Wei Tsou, Russell D. Dupuis, Zhiyu Xu, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Minkyu Cho, Hoon Jeong, Shyh-Chiang Shen

Publikováno v: IEEE Transactions on Electron Devices. 68:2759-2763

We report high-performance homojunction GaN avalanche photodiodes (APDs) grown on a low-defect GaN substrate and fabricated with an ion-implantation isolation method. High-quality p-i-n GaN layers were grown using metalorganic chemical vapor depositi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b7cddaf09965101ffb480195027c5d2f
https://doi.org/10.1109/ted.2021.3069153

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High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation

Autor: Chuan-Wei Tsou, Minkyu Cho, Russell D. Dupuis, Can Cao, Shyh-Chiang Shen, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Hoon Jeong, Zhiyu Xu

Publikováno v: Journal of Electronic Materials. 50:4462-4468

Front-illuminated GaN-based p-i-n ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition on a free-standing GaN substrate. X-ray diffraction measurements confirm the high crystal quality of the grown struct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16e6b99de25304ee4e3e5fe0d9827a16
https://doi.org/10.1007/s11664-021-08981-x

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Akademický článek

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Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

Autor: Russell D. Dupuis, Jiming Bao, Theeradetch Detchprohm, Shahab Shervin, Tain Tong, Kamrul Alam, R. L. Forrest, Mi-Hee Ji, Jae-Hyun Ryou, Sara Pouladi, Jie Chen, Mina Moradnia

Publikováno v: Journal of Materials Chemistry C. 9:2243-2251

Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::184a453bb4b09fe3558c4a53819cb415
https://doi.org/10.1039/d0tc04634e

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Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers

Autor: Marzieh Bakhtiary-Noodeh, Shyh-Chiang Shen, Russell D. Dupuis, Minkyu Cho, Zhiyu Xu, Theeradetch Detchphrom

Publikováno v: ECS Transactions. 98:49-59

Gallium-nitride and related materials have become suitable semiconductor platforms for next-generation power electronic devices. This materials system leverages unique properties of wider energy bandgap, higher carrier mobility, and ultrashort carrie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f764b2b9848fbbd489e36c7bcded90a1
https://doi.org/10.1149/09806.0049ecst

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Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

Autor: Young Jae Park, Shyh-Chiang Shen, Yuh-Shiuan Liu, P. Douglas Yoder, Theeradetch Detchprohm, Ping Chen, Russell D. Dupuis

Publikováno v: Journal of Electronic Materials. 49:2326-2331

The thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c8524377df6876a7aefaead92aba6eb
https://doi.org/10.1007/s11664-019-07932-x

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