Zobrazeno 1 - 10
of 11
pro vyhledávání: '"D C Rodway"'
Publikováno v:
Microphysics of Surfaces: Beam-Induced Processes.
The MOVPE deposition of semiconductors requires effective substrate surface preparation, especially where low temperature, photo-assisted growth is involved. Ideally this process should be achieved in situ in the growth reactor immediately prior to d
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:235
Earlier work by Bringans et al. [R. D. Bringans and M. A. Olmstead, J. Vac. Sci. Technol. B 7, 1232 (1989); R. I. C. Uhrberg, R. D. Bringans, M. A. Olmstead, R. Z. Bachrach, and J. E. Northrup, Phys. Rev. B 35, 3945 (1987)] and by Woolf [D. A. Woolf,
Publikováno v:
Journal of Physics D: Applied Physics. 16:2317-2321
The effect of the deposition of caesium overlayers on (111)A and (111)B epitaxial p-type CdTe has been studied in order to assess the potential of such material for use in NEA photoemission devices. It was found that, although clean CdTe surfaces wit
Publikováno v:
Applied Surface Science. 43:1-5
We have examined the suitability of calcium hexafluoroacetylacetonate as a precursor for the photochemical deposition of CaF2 onto GaAs. Initial experiments showed that, on heating in vacuum, this compound sublimed at temperatures above 50°C, and th
Publikováno v:
Le Journal de Physique Colloques. 35:C4-61
Autor:
D C Rodway, D J Bradley
Publikováno v:
Journal of Physics D: Applied Physics. 17:L137-L141
A study has been made of the relationship between the facetting and surface structure observed upon (111)B and (100)GaAs photocathode surfaces and the mean transverse emission energy of the photoelectrons emitted from these cathodes. It is concluded
Publikováno v:
Philosophical Magazine B. 40:51-70
Ultra-violet photoemission (hω⩽ 21.2 eV) measurements for Tl, Pb and Bi in the liquid and solid (frozen) states are reported. The spectra for the solid phase are consistent with other published data and are broadly similar to the spectra for the l
Autor:
M B Allenson, D C Rodway
Publikováno v:
Journal of Physics D: Applied Physics. 19:1353-1371
An in situ study of the activating layer on GaAs (Cs, O) photocathodes has been made using Auger electron spectroscopy, relative work function, photo-emission and spatial resolution measuring techniques. The layer thickness, composition and work func
Publikováno v:
Journal of Physics F: Metal Physics. 3:L182-L184
Photoemission measurements from clean liquid mercury are reported for photon energies up to 21 eV. The results are consistent with a dip in the density of states close to the Fermi level. In addition, a new value for the binding energy of the 5d core
Publikováno v:
Microphysics of Surfaces, Beams and Adsorbates.
Low temperature Metalorganic Vapour Phase Epitaxy (MOVPE) is critically dependent on the correct chemical and physical preparation of the substrate before growth. The major contaminants on GaAs substrate surfaces are oxygen, in the form of native oxi