Zobrazeno 1 - 10
of 91
pro vyhledávání: '"D B Holt"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b711fd18498803eaa383bb6f47e479d
https://doi.org/10.1201/9781003069621-115
https://doi.org/10.1201/9781003069621-115
Autor:
D B Holt, G A Hungerford
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474ce12326e4ee9a56c14ad476e11e47
https://doi.org/10.1201/9781003069621-113
https://doi.org/10.1201/9781003069621-113
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447c4f25463cc3368b6b4f8cdebebbb9
https://doi.org/10.1201/9781003069621-121
https://doi.org/10.1201/9781003069621-121
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16093997bd7aed4aa2b0c01dcb942ea9
https://doi.org/10.1201/9781003069614-50
https://doi.org/10.1201/9781003069614-50
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cff97715936b61e28280490f8e6bc2f
https://doi.org/10.1201/9781003069614-66
https://doi.org/10.1201/9781003069614-66
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce78e05c7246a26706f29691ad91446f
https://doi.org/10.1201/9781351074629-124
https://doi.org/10.1201/9781351074629-124
Autor:
D. B. Holt, E. Napchan
Publikováno v:
Scanning. 16:78-86
Summary: A microcomputer Monte Carlo program simulates electron trajectories in solids and describes the distribution of energy deposited throughout the energy-dissipation (electron-hole pair generation) vol ume. From this distribution, the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d7f7ab371ca4d31788821e9892d45b
https://doi.org/10.1002/sca.4950160203
https://doi.org/10.1002/sca.4950160203
Autor:
D. B. Holt
Publikováno v:
Scanning. 22:28-51
When no charge collecting p-n junction or Schottky barrier is present in the specimen, but two contacts are applied, conductive mode scanning electron microscope (SEM) observations known as remote electron beam-induced current (REBIC) can be made. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b65678ca2ed270bb5dc771067690b38
https://doi.org/10.1002/sca.4950220106
https://doi.org/10.1002/sca.4950220106
Publikováno v:
Review of Scientific Instruments. 70:3429-3431
Photocurrent mapping of heterointerfaces with sub-micron resolution has been successfully obtained in air by means of a specially designed optical-beam-induced-current setup. The experimental method is described and three important applications are p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bef8502072cfb0d44c3f9538753e1105
https://doi.org/10.1063/1.1149931
https://doi.org/10.1063/1.1149931
Autor:
Mei-Wei Tsao, Barry L. Farmer, John F. Rabolt, Qionghua Shen, D. B. Holt, Leonard V. Interrante, Karl-Heinz Pfeifer
Publikováno v:
Macromolecules. 29:7130-7135
Polysilaethylene ([SiH2CH2]n) (PSE) and deuterated polysilaethylene ([SiD2CH2]n) have been examined by both vibrational spectroscopy and X-ray diffraction methods above and below the crystallization/melting transition at −20 °C. The results confir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6890b941ddbaabfa4bb4fbd78b132418
https://doi.org/10.1021/ma960267b
https://doi.org/10.1021/ma960267b