Zobrazeno 1 - 10
of 159
pro vyhledávání: '"D A Mirabella"'
Publikováno v:
Sensors and Actuators B: Chemical. 285:232-239
In this work we derived the adsorption isotherms for non-dissociative and dissociative chemisorption of oxygen on a semiconductor surface. We extended the Wolkenstein theory for dissociative chemisorption and re-examined the basis that led to current
Publikováno v:
Solid State Ionics. 369:115725
Potential barriers formed at the intergrain of polycrystalline metal-oxide semiconductors, such as tin oxide, present fluctuations that are usually ignored in the study of gas sensors responses. Fluctuations in the Schottky-type barriers arise from t
We have studied the dynamic scaling properties of a growth model in which the particle attachment probability is a function of surface curvature. Preferential incorporation of particles at protuberances (rather than over valleys) is followed by surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24281ae92f3e08a377a4bd01b9957c05
https://linkinghub.elsevier.com/retrieve/pii/S0378437118311804
https://linkinghub.elsevier.com/retrieve/pii/S0378437118311804
Autor:
L. F. da Silva, P. M. Desimone, Ariadne C. Catto, D. A. Mirabella, Celso Manuel Aldao, Miguel Adolfo Ponce, Elson Longo
Publikováno v:
Sensors and Actuators B: Chemical. 329:129253
We investigated the power-law responses in two types of tin dioxide (SnO2) films: one made from nanosized grains and another from from very large grains, both under dry air. Experimental results revealed a significant dependence between the sensitivi
Autor:
C. M. Aldao, D. A. Mirabella
Publikováno v:
Topics in Catalysis. 54:108-113
Halogen adsorption induces roughening of Si(100) producing pits and regrowth structures that depend on the type of adsorbed halogen and coverage. It is thought that this spontaneous roughening arises from steric repul- sions between adsorbates. Recen
Publikováno v:
Surface Science. 603:3346-3349
The formation of two- and three-dimensional hillocks is regularly observed in Si(1 1 1) steps and Si(1 0 0) during wet etching. Frequently the resulting morphology consists of hillocks scattered on a landscape of limited roughness. Recently we propos
Publikováno v:
Surface Science. 602:1572-1578
We derived a simple mean field model that accounts for the formation of hillock-and-valley patterns after etching in steady state. The mechanisms and their interrelations that lead to these patterns experimentally observed are described. Hillocks and
Autor:
Celso Manuel Aldao, D. A. Mirabella
Surface grown by the deposition of rigid and wetting clusters has been investigated using Monte Carlo simulations in 1 + 1 dimensions. Dynamic scaling exponents were determined using the time evolution of the roughness, the local width, the height-he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2917a59f32878de80e818389e97c033
http://www.sciencedirect.com/science/article/pii/S0039602815002824
http://www.sciencedirect.com/science/article/pii/S0039602815002824
Publikováno v:
Journal of Molecular Catalysis A: Chemical. 228:111-115
With a solid-on-solid model, we show how adsorbates can induce surface roughening. Roughened surfaces exhibit pits and regrowth structures that have characteristic patterns that depend directly on the adsorbate coverage and on the strength and type o
Publikováno v:
Physical Review B. 59:9850-9853
Institute of Materials Science and Technology (INTEMA), Universidad Nacional de Mar del Plata-CONICET, Juan B. Justo 4302,7600 Mar del Plata, Argentina~Received 6 February 1998; revised manuscript received 24 August 1998!The kinetic roughening of ste