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pro vyhledávání: '"D A Cardwell"'
Autor:
Y Tsui, D A Moseley, A R Dennis, Y-H Shi, M R Beck, V Cientanni, D A Cardwell, J H Durrell, M D Ainslie
Publikováno v:
Superconductor Science and Technology. 35:084004
Bulk high-temperature superconducting materials can trap magnetic fields up to an order of magnitude larger than conventional permanent magnets. Recent advances in pulsed field magnetization (PFM) techniques now provide a fast and cost-effective meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc69a656333c8ed28565f0b346d67645
https://doi.org/10.1088/1361-6668/ac74e7
https://doi.org/10.1088/1361-6668/ac74e7
Akademický článek
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Autor:
C. L. Wang, L. J. Sun, S. B. Yan, L. Cheng, X. Yao, J. Xiong, B. W. Tao, J. Q. Feng, X. Y. Xu, C. S. Li, D. A. Cardwell, T. Y. Li
Publikováno v:
Journal of Applied Physics; Aug2010, Vol. 108 Issue 2, p023914, 6p, 2 Black and White Photographs, 7 Diagrams, 1 Chart, 3 Graphs
Autor:
Christine Jackson, Z. Zhang, A. Sasikumar, D. W. Cardwell, Wenyuan Sun, Steven A. Ringel, Aaron R. Arehart
Publikováno v:
Microelectronics Reliability. 56:37-44
Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power metal-insulator-semiconductor-high electron mobility transistors (MISHEMTs) is reported. This is achieved by using HEMT-based d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177a92f5b94586e3d017e5232e0e27eb
https://doi.org/10.1016/j.microrel.2015.10.026
https://doi.org/10.1016/j.microrel.2015.10.026
Autor:
Pran K. Paul, Aaron R. Arehart, Tyler J. Grassman, D. W. Cardwell, K. Galiano, Krishna Aryal, Jonathan P. Pelz, Christine Jackson, Steven A. Ringel, Sylvain Marsillac
Publikováno v:
IEEE Journal of Photovoltaics. 5:1482-1486
Nanometer-scale deep-level transient spectroscopy (nano-DLTS) is used to simultaneously map the spatial distribution of the $E_V$ + 0.47 eV trap in p-type Cu(In,Ga)Se2 with surface topography, providing a spatially resolved correlation between electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c63fc6d481a7c9ebdd9aa8c89a5efa2
https://doi.org/10.1109/jphotov.2015.2459971
https://doi.org/10.1109/jphotov.2015.2459971
The advent of tip-timing systems makes it possible to assess turbomachinery blade vibration using non-contact systems. Currently, the most widely used systems in industry are optical systems. However, these systems are still only used on development
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c0408662b72e81e0a685819b56dcb26
https://ora.ox.ac.uk/objects/uuid:0220172a-6b99-4c5d-bfb4-f6a1787d99fd
https://ora.ox.ac.uk/objects/uuid:0220172a-6b99-4c5d-bfb4-f6a1787d99fd
Autor:
D. W. Cardwell, Santino D. Carnevale, Steven A. Ringel, John A. Carlin, K. Galiano, Aaron R. Arehart, Tyler J. Grassman, Daniel J. Chmielewski, Pran K. Paul
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
This work investigates 2.05 eV bandgap (Al)GaInP alloys for use as the top junction of IMM solar cells. We explore balancing alloy composition and lattice constant as two complementary variables to achieve the target bandgap in one material system. H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f1eeb926459c924e8a09c59f9a918f1
https://doi.org/10.1109/pvsc.2016.7750300
https://doi.org/10.1109/pvsc.2016.7750300
Autor:
Nevinskas, I.1 ignas.nevinskas@ftmc.lt, Kamarauskas, M.1, Geižutis, A.1, Kovalevskij, V.1, Gaspariūnas, M.1, Bičiūnas, A.1, Urbanowicz, A.1, Norkus, R.1, Ikamas, K.1,2,3
Publikováno v:
Lithuanian Journal of Physics. 2024, Vol. 64 Issue 4, p253-258. 6p.
Autor:
Aaron R. Arehart, Tyler J. Grassman, Nathan Vaughn, Steven A. Ringel, Dan Chmielewski, Santino D. Carnevale, Chris Ratcliff, Pran K. Paul, D. W. Cardwell
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
We explore the lattice constant and Al content parameter space supporting (Al)GaInP materials with direct bandgaps >2.0 eV, to assess such materials for applications to future ≥4 junction multijunction photovoltaics. (AlzGa1−z)xIn1−xP test stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6f1bbddd6a59b943a6e21a1416b722
https://doi.org/10.1109/pvsc.2015.7356437
https://doi.org/10.1109/pvsc.2015.7356437
Autor:
Steven A. Ringel, James S. Speck, A. Sasikumar, D. W. Cardwell, Aaron R. Arehart, Sarah L. Keller, Jing Lu, Jonathan P. Pelz, Stephen W. Kaun, Umesh K. Mishra
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Recent reliability testing campaigns on AlGaN/GaN HEMTs have consistently revealed a critical E C -0.57 eV trap that is responsible for drain-lag, RF output power degradation, and current-collapse among other non-idealities. In this work, a comprehen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81ad4bd0e8365d18d65b03cdf8cf8c9
https://doi.org/10.1109/irps.2014.6860588
https://doi.org/10.1109/irps.2014.6860588